Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors
Tungsten diselenide (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula>) has emerged as a prom...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/5/481 |
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| author | Gennadiy Murastov Muhammad Awais Aslam Simon Leitner Vadym Tkachuk Iva Plutnarová Egon Pavlica Raul D. Rodriguez Zdenek Sofer Aleksandar Matković |
| author_facet | Gennadiy Murastov Muhammad Awais Aslam Simon Leitner Vadym Tkachuk Iva Plutnarová Egon Pavlica Raul D. Rodriguez Zdenek Sofer Aleksandar Matković |
| author_sort | Gennadiy Murastov |
| collection | DOAJ |
| description | Tungsten diselenide (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula>) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> field-effect transistors with multi-layer palladium diselenide (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>PdSe</mi><mn>2</mn></msub></semantics></math></inline-formula>) as a contact material. We demonstrate that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>PdSe</mi><mn>2</mn></msub></semantics></math></inline-formula> contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance <i>p</i>-type <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> devices with <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>PdSe</mi><mn>2</mn></msub></semantics></math></inline-formula> van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> under the contacts, enabling pinning of the threshold voltage to the valence band of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula>, yielding pure <i>p</i>-type operation of the devices. |
| first_indexed | 2024-04-25T00:23:36Z |
| format | Article |
| id | doaj.art-a5412c2b9c00426eb787281163681ad0 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-04-25T00:23:36Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-a5412c2b9c00426eb787281163681ad02024-03-12T16:51:45ZengMDPI AGNanomaterials2079-49912024-03-0114548110.3390/nano14050481Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect TransistorsGennadiy Murastov0Muhammad Awais Aslam1Simon Leitner2Vadym Tkachuk3Iva Plutnarová4Egon Pavlica5Raul D. Rodriguez6Zdenek Sofer7Aleksandar Matković8Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, AustriaDepartment Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, AustriaDepartment Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, AustriaLaboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, SloveniaDepartment of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech RepublicLaboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, SloveniaResearch School of Chemistry & Applied Biomedical Sciences, Tomsk Polytechnic University, Lenina ave. 30, 634034 Tomsk, RussiaDepartment of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech RepublicDepartment Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, AustriaTungsten diselenide (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula>) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> field-effect transistors with multi-layer palladium diselenide (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>PdSe</mi><mn>2</mn></msub></semantics></math></inline-formula>) as a contact material. We demonstrate that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>PdSe</mi><mn>2</mn></msub></semantics></math></inline-formula> contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance <i>p</i>-type <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> devices with <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>PdSe</mi><mn>2</mn></msub></semantics></math></inline-formula> van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula> under the contacts, enabling pinning of the threshold voltage to the valence band of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>WSe</mi><mn>2</mn></msub></semantics></math></inline-formula>, yielding pure <i>p</i>-type operation of the devices.https://www.mdpi.com/2079-4991/14/5/481palladium diselenidetungsten diselenidetungsten selenium oxidesemi-metallaser treatmentcontact engineering |
| spellingShingle | Gennadiy Murastov Muhammad Awais Aslam Simon Leitner Vadym Tkachuk Iva Plutnarová Egon Pavlica Raul D. Rodriguez Zdenek Sofer Aleksandar Matković Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors Nanomaterials palladium diselenide tungsten diselenide tungsten selenium oxide semi-metal laser treatment contact engineering |
| title | Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors |
| title_full | Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors |
| title_fullStr | Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors |
| title_full_unstemmed | Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors |
| title_short | Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors |
| title_sort | multi layer palladium diselenide as a contact material for two dimensional tungsten diselenide field effect transistors |
| topic | palladium diselenide tungsten diselenide tungsten selenium oxide semi-metal laser treatment contact engineering |
| url | https://www.mdpi.com/2079-4991/14/5/481 |
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