A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
<p>Abstract</p> <p>The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical et...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9601-6 |
| _version_ | 1797720360371617792 |
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| author | Zang KeYan Cheong DavyWC Liu HongFei Liu Hong Teng JingHua Chua SooJin |
| author_facet | Zang KeYan Cheong DavyWC Liu HongFei Liu Hong Teng JingHua Chua SooJin |
| author_sort | Zang KeYan |
| collection | DOAJ |
| description | <p>Abstract</p> <p>The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities. NELO is accomplished using a nanoporous mask layer patterned on GaN substrates. Chemical removal of the SiO<sub>2</sub> layer after growth of III-Nitride overlayers causes fracture at the interface between the GaN film and the original GaN substrate, resulting in free-standing GaN films with nanostructured surfaces on one side. These layers can be transferred to other substrates, and the nano-structured surface can be used in photonic devices, or planarized for power devices.</p> |
| first_indexed | 2024-03-12T09:19:19Z |
| format | Article |
| id | doaj.art-a5876f9052014037bb3c13a16b328d79 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:19:19Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-a5876f9052014037bb3c13a16b328d792023-09-02T14:39:22ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-015610511056A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous IntegrationZang KeYanCheong DavyWCLiu HongFeiLiu HongTeng JingHuaChua SooJin<p>Abstract</p> <p>The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities. NELO is accomplished using a nanoporous mask layer patterned on GaN substrates. Chemical removal of the SiO<sub>2</sub> layer after growth of III-Nitride overlayers causes fracture at the interface between the GaN film and the original GaN substrate, resulting in free-standing GaN films with nanostructured surfaces on one side. These layers can be transferred to other substrates, and the nano-structured surface can be used in photonic devices, or planarized for power devices.</p>http://dx.doi.org/10.1007/s11671-010-9601-6NanorodLift offIII-nitride semiconductor |
| spellingShingle | Zang KeYan Cheong DavyWC Liu HongFei Liu Hong Teng JingHua Chua SooJin A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration Nanoscale Research Letters Nanorod Lift off III-nitride semiconductor |
| title | A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration |
| title_full | A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration |
| title_fullStr | A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration |
| title_full_unstemmed | A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration |
| title_short | A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration |
| title_sort | new method for lift off of iii nitride semiconductors for heterogeneous integration |
| topic | Nanorod Lift off III-nitride semiconductor |
| url | http://dx.doi.org/10.1007/s11671-010-9601-6 |
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