SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE
Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the use of metal-organic vapor phase epitaxy. Method...
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| Format: | Article |
| Language: | English |
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Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University)
2016-11-01
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| Series: | Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki |
| Subjects: | |
| Online Access: | http://ntv.ifmo.ru/file/article/16174.pdf |
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| author | Marina G. Mynbaeva Demid A. Kirilenko Alla A. Sitnikova Arina V. Kremleva Vladimir I. Nikolaev Karim D. Mynbaev Maxim A. Odnoblyudov Harri Lipsanen Vladislav E. Bougrov Alexey E. Romanov |
| author_facet | Marina G. Mynbaeva Demid A. Kirilenko Alla A. Sitnikova Arina V. Kremleva Vladimir I. Nikolaev Karim D. Mynbaev Maxim A. Odnoblyudov Harri Lipsanen Vladislav E. Bougrov Alexey E. Romanov |
| author_sort | Marina G. Mynbaeva |
| collection | DOAJ |
| description | Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the use of metal-organic vapor phase epitaxy. Methods. The growth of initial GaN layers was performed with the use of metal-organic vapor phase epitaxy. On the surface of the initial layers columns with the height of 800 nm were generated by means of ion etching. These columns were overgrown with 3-4 µm-thick GaN layers. On thus formed substrate multi-stage growth of GaN layers was performed with the use of hydride vapor-phase epitaxy. The total thickness of GaN layers was 100-1500 µm. The grown layers were studied by optical and electron microscopy and Raman spectroscopy. Main Results. Density of threading dislocations in the layers grown by hydride vapor-phase epitaxy was (3-6)·107 cm-2, that was one order of magnitude lower than in the used substrate, and two to three orders lower than dislocation density in typical GaN layers grown on commercial sapphire substrates. Raman spectroscopy data were indicative of low level of mechanical stress in the layers and their high structural uniformity. It was established that under multi-stage growth conditions, non-catastrophic cracks (those that do not cause sample destruction) are able to transform into macropores and appear to be an important structural element, serving to stress relaxation in the bulk of thick gallium nitride layers grown on foreign substrates. Practical Relevance. The results of the study can be used in the development of III-nitride heterostructures for optoelectronics and high-power and high-frequency microelectronics. |
| first_indexed | 2024-04-13T09:32:26Z |
| format | Article |
| id | doaj.art-a5889b766dbb45aaa25be34cf3443081 |
| institution | Directory Open Access Journal |
| issn | 2226-1494 2500-0373 |
| language | English |
| last_indexed | 2024-04-13T09:32:26Z |
| publishDate | 2016-11-01 |
| publisher | Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) |
| record_format | Article |
| series | Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki |
| spelling | doaj.art-a5889b766dbb45aaa25be34cf34430812022-12-22T02:52:12ZengSaint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University)Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki2226-14942500-03732016-11-011661048105510.17586/2226-1494-2016-16-6-1048-1055SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTUREMarina G. Mynbaeva0Demid A. Kirilenko 1Alla A. Sitnikova2Arina V. Kremleva 3Vladimir I. Nikolaev4Karim D. Mynbaev5Maxim A. Odnoblyudov6Harri Lipsanen 7Vladislav E. Bougrov8Alexey E. Romanov9PhD, senior researcher, Ioffe Institute, Saint Petersburg, 194021, Russian Federation; engineer, ITMO University, Saint Petersburg, 197101, Russian Federationresearcher, Ioffe Institute, Saint Petersburg, 194021, Russian Federation; engineer, ITMO University, Saint Petersburg, 197101, Russian Federationsenior researcher, Ioffe Institute, Saint Petersburg, 194021, Russian Federationpostgraduate, ITMO University, Saint Petersburg, 197101, Russian FederationPhD, Associate professor, ITMO University, Saint Petersburg, 197101, Russian Federation; Head of laboratory, Ioffe Institute, Saint Petersburg, 194021, Russian Federation D.Sc., Head of laboratory, Ioffe Institute, Saint Petersburg, 194021, Russian Federation; Professor, ITMO University, Saint Petersburg, 197101, Russian FederationPhD, Executive Director, Peter the Great St. Petersburg Polytechnic University, Saint Petersburg, 195251, Russian Federation; leading engineer, ITMO University, Saint Petersburg, 197101, Russian Federation PhD, Full Professor, Aalto University, Aalto, 02150, Finland; Professor, ITMO University, Saint Petersburg, 197101, Russian FederationD.Sc., Associate professor, Head of Chair, ITMO University, Saint Petersburg, 197101, Russian Federation D.Sc., Head of Chair, ITMO University, Saint Petersburg, 197101, Russian Federation; Chief researcher, Ioffe Institute, Saint Petersburg, 194021, Russian FederationSubject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the use of metal-organic vapor phase epitaxy. Methods. The growth of initial GaN layers was performed with the use of metal-organic vapor phase epitaxy. On the surface of the initial layers columns with the height of 800 nm were generated by means of ion etching. These columns were overgrown with 3-4 µm-thick GaN layers. On thus formed substrate multi-stage growth of GaN layers was performed with the use of hydride vapor-phase epitaxy. The total thickness of GaN layers was 100-1500 µm. The grown layers were studied by optical and electron microscopy and Raman spectroscopy. Main Results. Density of threading dislocations in the layers grown by hydride vapor-phase epitaxy was (3-6)·107 cm-2, that was one order of magnitude lower than in the used substrate, and two to three orders lower than dislocation density in typical GaN layers grown on commercial sapphire substrates. Raman spectroscopy data were indicative of low level of mechanical stress in the layers and their high structural uniformity. It was established that under multi-stage growth conditions, non-catastrophic cracks (those that do not cause sample destruction) are able to transform into macropores and appear to be an important structural element, serving to stress relaxation in the bulk of thick gallium nitride layers grown on foreign substrates. Practical Relevance. The results of the study can be used in the development of III-nitride heterostructures for optoelectronics and high-power and high-frequency microelectronics.http://ntv.ifmo.ru/file/article/16174.pdfgallium nitrideepitaxydefectscrackssubstrates |
| spellingShingle | Marina G. Mynbaeva Demid A. Kirilenko Alla A. Sitnikova Arina V. Kremleva Vladimir I. Nikolaev Karim D. Mynbaev Maxim A. Odnoblyudov Harri Lipsanen Vladislav E. Bougrov Alexey E. Romanov SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki gallium nitride epitaxy defects cracks substrates |
| title | SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE |
| title_full | SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE |
| title_fullStr | SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE |
| title_full_unstemmed | SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE |
| title_short | SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE |
| title_sort | synthesis of thick gallium nitride layers by method of multi stage growth on substrates with column structure |
| topic | gallium nitride epitaxy defects cracks substrates |
| url | http://ntv.ifmo.ru/file/article/16174.pdf |
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