SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE

SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE

Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the use of metal-organic vapor phase epitaxy. Method...

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Bibliographic Details
Main Authors: Marina G. Mynbaeva, Demid A. Kirilenko, Alla A. Sitnikova, Arina V. Kremleva, Vladimir I. Nikolaev, Karim D. Mynbaev, Maxim A. Odnoblyudov, Harri Lipsanen, Vladislav E. Bougrov, Alexey E. Romanov
Format: Article
Language:English
Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2016-11-01
Series:Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:
gallium nitride
epitaxy
defects
cracks
substrates
Online Access:http://ntv.ifmo.ru/file/article/16174.pdf

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