Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages
Given that power consumption and short-channel effects exist in a trade-off relationship, there has been much effort to investigate short-channel transistors which enable relative reductions in the operating voltage. Recently, the feasibility of transistors operating at ultra-low voltages with a nan...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8049267/ |
| _version_ | 1819172004857643008 |
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| author | Byeong-Cheol Kang Tae-Jun Ha |
| author_facet | Byeong-Cheol Kang Tae-Jun Ha |
| author_sort | Byeong-Cheol Kang |
| collection | DOAJ |
| description | Given that power consumption and short-channel effects exist in a trade-off relationship, there has been much effort to investigate short-channel transistors which enable relative reductions in the operating voltage. Recently, the feasibility of transistors operating at ultra-low voltages with a nanometer-scale channel length has been extensively investigated for future nanoelectronics. Here, we demonstrate solution-processed single-walled carbon nanotubes-based thin-film transistors (SWCNT-TFTs) with a sub-20-nm-channel operating at ultra-low voltages which utilize an electromigration technique that induces a broken bridge of nanoparticles. By employing the post-treatment process of thermal annealing in a vacuum, the charge transport of the short-channel SWCNT-TFTs was improved. The origin of such improvements is presumed to reduce the charge impurities, including organic/inorganic residues as defect states, as well as to improve electric contact between the SWCNT and the metal electrode, which strongly affects the one-dimensional charge transport. |
| first_indexed | 2024-12-22T20:00:18Z |
| format | Article |
| id | doaj.art-a58c37005000404f99dfab4591378955 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T20:00:18Z |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-a58c37005000404f99dfab45913789552022-12-21T18:14:17ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015652552910.1109/JEDS.2017.27562638049267Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low VoltagesByeong-Cheol Kang0Tae-Jun Ha1https://orcid.org/0000-0002-0935-795XDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul, South KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul, South KoreaGiven that power consumption and short-channel effects exist in a trade-off relationship, there has been much effort to investigate short-channel transistors which enable relative reductions in the operating voltage. Recently, the feasibility of transistors operating at ultra-low voltages with a nanometer-scale channel length has been extensively investigated for future nanoelectronics. Here, we demonstrate solution-processed single-walled carbon nanotubes-based thin-film transistors (SWCNT-TFTs) with a sub-20-nm-channel operating at ultra-low voltages which utilize an electromigration technique that induces a broken bridge of nanoparticles. By employing the post-treatment process of thermal annealing in a vacuum, the charge transport of the short-channel SWCNT-TFTs was improved. The origin of such improvements is presumed to reduce the charge impurities, including organic/inorganic residues as defect states, as well as to improve electric contact between the SWCNT and the metal electrode, which strongly affects the one-dimensional charge transport.https://ieeexplore.ieee.org/document/8049267/Short-channelcharge transportsingle-walled carbon nanotubethermal annealing in vacuum |
| spellingShingle | Byeong-Cheol Kang Tae-Jun Ha Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages IEEE Journal of the Electron Devices Society Short-channel charge transport single-walled carbon nanotube thermal annealing in vacuum |
| title | Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages |
| title_full | Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages |
| title_fullStr | Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages |
| title_full_unstemmed | Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages |
| title_short | Single-Walled Carbon Nanotube Short-Channel Transistors Operating at Ultra-Low Voltages |
| title_sort | single walled carbon nanotube short channel transistors operating at ultra low voltages |
| topic | Short-channel charge transport single-walled carbon nanotube thermal annealing in vacuum |
| url | https://ieeexplore.ieee.org/document/8049267/ |
| work_keys_str_mv | AT byeongcheolkang singlewalledcarbonnanotubeshortchanneltransistorsoperatingatultralowvoltages AT taejunha singlewalledcarbonnanotubeshortchanneltransistorsoperatingatultralowvoltages |