Reduced material loss in thin-film lithium niobate waveguides

Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state...

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Main Authors: Amirhassan Shams-Ansari, Guanhao Huang, Lingyan He, Zihan Li, Jeffrey Holzgrafe, Marc Jankowski, Mikhail Churaev, Prashanta Kharel, Rebecca Cheng, Di Zhu, Neil Sinclair, Boris Desiatov, Mian Zhang, Tobias J. Kippenberg, Marko Lončar
Format: Article
Language:English
Published: AIP Publishing LLC 2022-08-01
Series:APL Photonics
Online Access:http://dx.doi.org/10.1063/5.0095146
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author Amirhassan Shams-Ansari
Guanhao Huang
Lingyan He
Zihan Li
Jeffrey Holzgrafe
Marc Jankowski
Mikhail Churaev
Prashanta Kharel
Rebecca Cheng
Di Zhu
Neil Sinclair
Boris Desiatov
Mian Zhang
Tobias J. Kippenberg
Marko Lončar
author_facet Amirhassan Shams-Ansari
Guanhao Huang
Lingyan He
Zihan Li
Jeffrey Holzgrafe
Marc Jankowski
Mikhail Churaev
Prashanta Kharel
Rebecca Cheng
Di Zhu
Neil Sinclair
Boris Desiatov
Mian Zhang
Tobias J. Kippenberg
Marko Lončar
author_sort Amirhassan Shams-Ansari
collection DOAJ
description Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art resonator (Q-factor of ∼10 million). Yet the material limitations of ion-sliced thin film lithium niobate have not been explored; therefore, it is unclear how high the quality factor can be achieved in this platform. Here, using our newly developed characterization method, we find out that the material limited quality factor of thin film lithium niobate photonic platform can be improved using post-fabrication annealing and can be as high as Q ≈ 1.6 × 108 at telecommunication wavelengths, corresponding to a propagation loss of 0.2  dB/m.
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spelling doaj.art-a5c446885dce4d03ad9d9237ccdc5a6d2022-12-22T01:59:56ZengAIP Publishing LLCAPL Photonics2378-09672022-08-0178081301081301-710.1063/5.0095146Reduced material loss in thin-film lithium niobate waveguidesAmirhassan Shams-Ansari0Guanhao Huang1Lingyan He2Zihan Li3Jeffrey Holzgrafe4Marc Jankowski5Mikhail Churaev6Prashanta Kharel7Rebecca Cheng8Di Zhu9Neil Sinclair10Boris Desiatov11Mian Zhang12Tobias J. Kippenberg13Marko Lončar14John A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAInstitute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandHyperLight, 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USAInstitute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAE. L. Ginzton Laboratory, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305, USAInstitute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandHyperLight, 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USAJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAHyperLight, 501 Massachusetts Avenue, Cambridge, Massachusetts 02139, USAInstitute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138, USAThin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art resonator (Q-factor of ∼10 million). Yet the material limitations of ion-sliced thin film lithium niobate have not been explored; therefore, it is unclear how high the quality factor can be achieved in this platform. Here, using our newly developed characterization method, we find out that the material limited quality factor of thin film lithium niobate photonic platform can be improved using post-fabrication annealing and can be as high as Q ≈ 1.6 × 108 at telecommunication wavelengths, corresponding to a propagation loss of 0.2  dB/m.http://dx.doi.org/10.1063/5.0095146
spellingShingle Amirhassan Shams-Ansari
Guanhao Huang
Lingyan He
Zihan Li
Jeffrey Holzgrafe
Marc Jankowski
Mikhail Churaev
Prashanta Kharel
Rebecca Cheng
Di Zhu
Neil Sinclair
Boris Desiatov
Mian Zhang
Tobias J. Kippenberg
Marko Lončar
Reduced material loss in thin-film lithium niobate waveguides
APL Photonics
title Reduced material loss in thin-film lithium niobate waveguides
title_full Reduced material loss in thin-film lithium niobate waveguides
title_fullStr Reduced material loss in thin-film lithium niobate waveguides
title_full_unstemmed Reduced material loss in thin-film lithium niobate waveguides
title_short Reduced material loss in thin-film lithium niobate waveguides
title_sort reduced material loss in thin film lithium niobate waveguides
url http://dx.doi.org/10.1063/5.0095146
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