Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process
<p>Abstract</p> <p>A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W<sub>18</sub>O<sub>...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2009-01-01
|
| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9318-6 |
| _version_ | 1797722350520631296 |
|---|---|
| author | Senthil Karuppanan Kim Hyeyoung Yong Kijung |
| author_facet | Senthil Karuppanan Kim Hyeyoung Yong Kijung |
| author_sort | Senthil Karuppanan |
| collection | DOAJ |
| description | <p>Abstract</p> <p>A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W<sub>18</sub>O<sub>49</sub>nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W<sub>18</sub>O<sub>49</sub>nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters.</p> |
| first_indexed | 2024-03-12T09:46:21Z |
| format | Article |
| id | doaj.art-a5e2f9cbb0814633a8e7982230cdca54 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:46:21Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-a5e2f9cbb0814633a8e7982230cdca542023-09-02T12:50:33ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0148802808Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation ProcessSenthil KaruppananKim HyeyoungYong Kijung<p>Abstract</p> <p>A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W<sub>18</sub>O<sub>49</sub>nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W<sub>18</sub>O<sub>49</sub>nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters.</p>http://dx.doi.org/10.1007/s11671-009-9318-6Silicon carbideTungsten oxideNanowiresNanorodsVapor–solid mechanismField emission |
| spellingShingle | Senthil Karuppanan Kim Hyeyoung Yong Kijung Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process Nanoscale Research Letters Silicon carbide Tungsten oxide Nanowires Nanorods Vapor–solid mechanism Field emission |
| title | Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process |
| title_full | Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process |
| title_fullStr | Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process |
| title_full_unstemmed | Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process |
| title_short | Synthesis of Novel Double-Layer Nanostructures of SiC–WO<sub> <it>x</it> </sub>by a Two Step Thermal Evaporation Process |
| title_sort | synthesis of novel double layer nanostructures of sic 8211 wo sub it x it sub by a two step thermal evaporation process |
| topic | Silicon carbide Tungsten oxide Nanowires Nanorods Vapor–solid mechanism Field emission |
| url | http://dx.doi.org/10.1007/s11671-009-9318-6 |
| work_keys_str_mv | AT senthilkaruppanan synthesisofnoveldoublelayernanostructuresofsic8211wosubitxitsubbyatwostepthermalevaporationprocess AT kimhyeyoung synthesisofnoveldoublelayernanostructuresofsic8211wosubitxitsubbyatwostepthermalevaporationprocess AT yongkijung synthesisofnoveldoublelayernanostructuresofsic8211wosubitxitsubbyatwostepthermalevaporationprocess |