Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design
Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and co...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/11/23/11088 |
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| author | Djeber Guendouz Chhandak Mukherjee Marina Deng Magali De Matos Christophe Caillaud Hervé Bertin Antoine Bobin Nicolas Vaissière Karim Mekhazni Franck Mallecot Akshay M. Arabhavi Rimjhim Chaudhary Olivier Ostinelli Colombo Bolognesi Patrick Mounaix Cristell Maneux |
| author_facet | Djeber Guendouz Chhandak Mukherjee Marina Deng Magali De Matos Christophe Caillaud Hervé Bertin Antoine Bobin Nicolas Vaissière Karim Mekhazni Franck Mallecot Akshay M. Arabhavi Rimjhim Chaudhary Olivier Ostinelli Colombo Bolognesi Patrick Mounaix Cristell Maneux |
| author_sort | Djeber Guendouz |
| collection | DOAJ |
| description | Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries. |
| first_indexed | 2024-03-10T04:58:25Z |
| format | Article |
| id | doaj.art-a5fe06dba26e4b9d885e877439279785 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T04:58:25Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-a5fe06dba26e4b9d885e8774392797852023-11-23T02:02:15ZengMDPI AGApplied Sciences2076-34172021-11-0111231108810.3390/app112311088Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems DesignDjeber Guendouz0Chhandak Mukherjee1Marina Deng2Magali De Matos3Christophe Caillaud4Hervé Bertin5Antoine Bobin6Nicolas Vaissière7Karim Mekhazni8Franck Mallecot9Akshay M. Arabhavi10Rimjhim Chaudhary11Olivier Ostinelli12Colombo Bolognesi13Patrick Mounaix14Cristell Maneux15IMS Laboratory, University of Bordeaux, UMR CNRS 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, UMR CNRS 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, UMR CNRS 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, UMR CNRS 5218, 33405 Talence, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceMillimeter-Wave Electronics Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, Gloriastrasse 35, 8092 Zürich, SwitzerlandMillimeter-Wave Electronics Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, Gloriastrasse 35, 8092 Zürich, SwitzerlandMillimeter-Wave Electronics Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, Gloriastrasse 35, 8092 Zürich, SwitzerlandMillimeter-Wave Electronics Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, Gloriastrasse 35, 8092 Zürich, SwitzerlandIMS Laboratory, University of Bordeaux, UMR CNRS 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, UMR CNRS 5218, 33405 Talence, FranceDue to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries.https://www.mdpi.com/2076-3417/11/23/11088uni-traveling carrier photodiodecompact modelSPICEterahertzde-embeddingon-wafer characterization |
| spellingShingle | Djeber Guendouz Chhandak Mukherjee Marina Deng Magali De Matos Christophe Caillaud Hervé Bertin Antoine Bobin Nicolas Vaissière Karim Mekhazni Franck Mallecot Akshay M. Arabhavi Rimjhim Chaudhary Olivier Ostinelli Colombo Bolognesi Patrick Mounaix Cristell Maneux Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Applied Sciences uni-traveling carrier photodiode compact model SPICE terahertz de-embedding on-wafer characterization |
| title | Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design |
| title_full | Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design |
| title_fullStr | Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design |
| title_full_unstemmed | Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design |
| title_short | Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design |
| title_sort | multiscale compact modelling of utc photodiodes enabling monolithic terahertz communication systems design |
| topic | uni-traveling carrier photodiode compact model SPICE terahertz de-embedding on-wafer characterization |
| url | https://www.mdpi.com/2076-3417/11/23/11088 |
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