Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile
Reducing the Cu(InxGa1−x)Se2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 µm-thickness-CIGS was synthesized via...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-03-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718330997 |
| _version_ | 1818853554223316992 |
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| author | Hui Li Fei Qu Haitian Luo Xiaona Niu Jingwei Chen Yi Zhang Huijun Yao Xiaojie Jia Hongwei Gu Wenjing Wang |
| author_facet | Hui Li Fei Qu Haitian Luo Xiaona Niu Jingwei Chen Yi Zhang Huijun Yao Xiaojie Jia Hongwei Gu Wenjing Wang |
| author_sort | Hui Li |
| collection | DOAJ |
| description | Reducing the Cu(InxGa1−x)Se2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 µm-thickness-CIGS was synthesized via a three-stage co-evaporation method. The obtained CIGS solar cells were characterized by capacitance-voltage, capacitance-frequency, secondary ion mass spectrometry, X-ray fluorescence, transmission electron microscope, and electron beam induced current techniques. By optimizing the grain size, interface quality, and the Ga gradient in the ultrathin CIGS solar cell, the highest efficiency reached to 11.72% without any light trapping and anti-reflecting coating techniques. Compared with the typical CIGS solar cell with a thickness of 2.3 µm, the ultrathin CIGS solar cell showed a higher open-circuit voltage due to formation a back electrical field. The grain boundaries were found to be beneficial to the carrier’s separation and transport. The ultrathin CIGS solar cell had good ability to resist ion bombardment, suggesting its potential application in the space devices. Our results provide a strategy to achieve high-efficiency ultrathin CIGS solar cells. Keywords: Cu(InxGa1−x)Se2 solar cells, Ultrathin, High interface quality, Heavy ion bombardment |
| first_indexed | 2024-12-19T07:38:39Z |
| format | Article |
| id | doaj.art-a60956118f834fe19987d2e3f127e667 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-19T07:38:39Z |
| publishDate | 2019-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-a60956118f834fe19987d2e3f127e6672022-12-21T20:30:31ZengElsevierResults in Physics2211-37972019-03-0112704711Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profileHui Li0Fei Qu1Haitian Luo2Xiaona Niu3Jingwei Chen4Yi Zhang5Huijun Yao6Xiaojie Jia7Hongwei Gu8Wenjing Wang9Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding authors at: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China.Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, ChinaInstitute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, ChinaInstitute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, ChinaInstitute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, ChinaInstitute of Photo-electronic Thin Film Devices and Technology, and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, ChinaInstitute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, ChinaInstitute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, ChinaInstitute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding authors at: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China.Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, ChinaReducing the Cu(InxGa1−x)Se2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 µm-thickness-CIGS was synthesized via a three-stage co-evaporation method. The obtained CIGS solar cells were characterized by capacitance-voltage, capacitance-frequency, secondary ion mass spectrometry, X-ray fluorescence, transmission electron microscope, and electron beam induced current techniques. By optimizing the grain size, interface quality, and the Ga gradient in the ultrathin CIGS solar cell, the highest efficiency reached to 11.72% without any light trapping and anti-reflecting coating techniques. Compared with the typical CIGS solar cell with a thickness of 2.3 µm, the ultrathin CIGS solar cell showed a higher open-circuit voltage due to formation a back electrical field. The grain boundaries were found to be beneficial to the carrier’s separation and transport. The ultrathin CIGS solar cell had good ability to resist ion bombardment, suggesting its potential application in the space devices. Our results provide a strategy to achieve high-efficiency ultrathin CIGS solar cells. Keywords: Cu(InxGa1−x)Se2 solar cells, Ultrathin, High interface quality, Heavy ion bombardmenthttp://www.sciencedirect.com/science/article/pii/S2211379718330997 |
| spellingShingle | Hui Li Fei Qu Haitian Luo Xiaona Niu Jingwei Chen Yi Zhang Huijun Yao Xiaojie Jia Hongwei Gu Wenjing Wang Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile Results in Physics |
| title | Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile |
| title_full | Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile |
| title_fullStr | Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile |
| title_full_unstemmed | Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile |
| title_short | Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1−x)Se2 solar cells with a single-gradient band gap profile |
| title_sort | engineering cigs grains qualities to achieve high efficiency in ultrathin cu inxga1 x se2 solar cells with a single gradient band gap profile |
| url | http://www.sciencedirect.com/science/article/pii/S2211379718330997 |
| work_keys_str_mv | AT huili engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT feiqu engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT haitianluo engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT xiaonaniu engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT jingweichen engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT yizhang engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT huijunyao engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT xiaojiejia engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT hongweigu engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile AT wenjingwang engineeringcigsgrainsqualitiestoachievehighefficiencyinultrathincuinxga1xse2solarcellswithasinglegradientbandgapprofile |