Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism
Nickel oxide (NiO) is a wide band gap semiconductor material that is used as an electrochromic layer or an ion storage layer in electrochromic devices. In this work, the effect of annealing temperature on sol-gel NiO films was investigated. Fourier transform infrared spectroscopy (FTIR) showed that...
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MDPI AG
2021-01-01
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| Online Access: | https://www.mdpi.com/2072-666X/12/1/80 |
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| author | Muyang Shi Tian Qiu Biao Tang Guanguang Zhang Rihui Yao Wei Xu Junlong Chen Xiao Fu Honglong Ning Junbiao Peng |
| author_facet | Muyang Shi Tian Qiu Biao Tang Guanguang Zhang Rihui Yao Wei Xu Junlong Chen Xiao Fu Honglong Ning Junbiao Peng |
| author_sort | Muyang Shi |
| collection | DOAJ |
| description | Nickel oxide (NiO) is a wide band gap semiconductor material that is used as an electrochromic layer or an ion storage layer in electrochromic devices. In this work, the effect of annealing temperature on sol-gel NiO films was investigated. Fourier transform infrared spectroscopy (FTIR) showed that the formation of NiO via decomposition of the precursor nickel acetate occurred at about 300 °C. Meanwhile, an increase in roughness was observed by Atomic force microscope (AFM), and precipitation of a large number of crystallites was observed at 500 °C. X-ray Diffraction (XRD) showed that the NiO film obtained at such a temperature showed a degree of crystallinity. The film crystallinity and crystallite size also increased with increasing annealing temperature. An ultraviolet spectrophotometer was used to investigate the optical band gap of the colored NiO films, and it was found that the band gap increased from 3.65 eV to 3.74 eV with the increase in annealing temperature. An electrochromic test further showed that optical modulation density and coloring efficiency decreased with the increase in crystallite size. The electrochromic reaction of the nickel oxide film is more likely to occur at the crystal interface and is closely related to the change of the optical band gap. An NiO film with smaller crystallite size is more conducive to ion implantation and the films treated at 300 °C exhibit optimum electrochromic behavior. |
| first_indexed | 2024-03-09T04:49:05Z |
| format | Article |
| id | doaj.art-a6398000c0fe44eaac44465ca6a5ddc0 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T04:49:05Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-a6398000c0fe44eaac44465ca6a5ddc02023-12-03T13:12:27ZengMDPI AGMicromachines2072-666X2021-01-011218010.3390/mi12010080Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in ElectrochromismMuyang Shi0Tian Qiu1Biao Tang2Guanguang Zhang3Rihui Yao4Wei Xu5Junlong Chen6Xiao Fu7Honglong Ning8Junbiao Peng9State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaDepartment of Intelligent Manufacturing, Wuyi University, Jiangmen 529020, ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaNickel oxide (NiO) is a wide band gap semiconductor material that is used as an electrochromic layer or an ion storage layer in electrochromic devices. In this work, the effect of annealing temperature on sol-gel NiO films was investigated. Fourier transform infrared spectroscopy (FTIR) showed that the formation of NiO via decomposition of the precursor nickel acetate occurred at about 300 °C. Meanwhile, an increase in roughness was observed by Atomic force microscope (AFM), and precipitation of a large number of crystallites was observed at 500 °C. X-ray Diffraction (XRD) showed that the NiO film obtained at such a temperature showed a degree of crystallinity. The film crystallinity and crystallite size also increased with increasing annealing temperature. An ultraviolet spectrophotometer was used to investigate the optical band gap of the colored NiO films, and it was found that the band gap increased from 3.65 eV to 3.74 eV with the increase in annealing temperature. An electrochromic test further showed that optical modulation density and coloring efficiency decreased with the increase in crystallite size. The electrochromic reaction of the nickel oxide film is more likely to occur at the crystal interface and is closely related to the change of the optical band gap. An NiO film with smaller crystallite size is more conducive to ion implantation and the films treated at 300 °C exhibit optimum electrochromic behavior.https://www.mdpi.com/2072-666X/12/1/80nickel oxideannealing temperaturecrystallite sizeoptical band gapelectrochromic device |
| spellingShingle | Muyang Shi Tian Qiu Biao Tang Guanguang Zhang Rihui Yao Wei Xu Junlong Chen Xiao Fu Honglong Ning Junbiao Peng Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism Micromachines nickel oxide annealing temperature crystallite size optical band gap electrochromic device |
| title | Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism |
| title_full | Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism |
| title_fullStr | Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism |
| title_full_unstemmed | Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism |
| title_short | Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism |
| title_sort | temperature controlled crystal size of wide band gap nickel oxide and its application in electrochromism |
| topic | nickel oxide annealing temperature crystallite size optical band gap electrochromic device |
| url | https://www.mdpi.com/2072-666X/12/1/80 |
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