MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization
The current work proposed the application of methylammonium lead iodide (MAPbI<sub>3</sub>) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI<sub>3</sub>(rods)-silver (Ag/MAPbI<sub>3<...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-08-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/16/4385 |
| _version_ | 1797523151947563008 |
|---|---|
| author | Ehsan Raza Fakhra Aziz Arti Mishra Noora Jabor Al-Thani Zubair Ahmad |
| author_facet | Ehsan Raza Fakhra Aziz Arti Mishra Noora Jabor Al-Thani Zubair Ahmad |
| author_sort | Ehsan Raza |
| collection | DOAJ |
| description | The current work proposed the application of methylammonium lead iodide (MAPbI<sub>3</sub>) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI<sub>3</sub>(rods)-silver (Ag/MAPbI<sub>3</sub>/Ag) based photo-resistor was fabricated. The MAPbI<sub>3</sub> microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI<sub>3</sub> microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI<sub>3</sub> microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond. |
| first_indexed | 2024-03-10T08:39:20Z |
| format | Article |
| id | doaj.art-a657f859ea3542f7be2814bc99ffd363 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T08:39:20Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-a657f859ea3542f7be2814bc99ffd3632023-11-22T08:26:44ZengMDPI AGMaterials1996-19442021-08-011416438510.3390/ma14164385MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical CharacterizationEhsan Raza0Fakhra Aziz1Arti Mishra2Noora Jabor Al-Thani3Zubair Ahmad4Department of Electronics, University of Peshawar, Peshawar 25120, PakistanDepartment of Electronics, Jinnah College for Women, University of Peshawar, Peshawar 25120, PakistanCenter for Advanced Materials (CAM), Qatar University, Doha 2713, QatarQatar University Young Scientists Center (YSC), Qatar University, Doha 2713, QatarCenter for Advanced Materials (CAM), Qatar University, Doha 2713, QatarThe current work proposed the application of methylammonium lead iodide (MAPbI<sub>3</sub>) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI<sub>3</sub>(rods)-silver (Ag/MAPbI<sub>3</sub>/Ag) based photo-resistor was fabricated. The MAPbI<sub>3</sub> microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI<sub>3</sub> microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI<sub>3</sub> microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.https://www.mdpi.com/1996-1944/14/16/4385MAPbI<sub>3</sub>microrodphoto-resistor |
| spellingShingle | Ehsan Raza Fakhra Aziz Arti Mishra Noora Jabor Al-Thani Zubair Ahmad MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization Materials MAPbI<sub>3</sub> microrod photo-resistor |
| title | MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization |
| title_full | MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization |
| title_fullStr | MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization |
| title_full_unstemmed | MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization |
| title_short | MAPbI<sub>3</sub> Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization |
| title_sort | mapbi sub 3 sub microrods based photo resistor switches fabrication and electrical characterization |
| topic | MAPbI<sub>3</sub> microrod photo-resistor |
| url | https://www.mdpi.com/1996-1944/14/16/4385 |
| work_keys_str_mv | AT ehsanraza mapbisub3submicrorodsbasedphotoresistorswitchesfabricationandelectricalcharacterization AT fakhraaziz mapbisub3submicrorodsbasedphotoresistorswitchesfabricationandelectricalcharacterization AT artimishra mapbisub3submicrorodsbasedphotoresistorswitchesfabricationandelectricalcharacterization AT noorajaboralthani mapbisub3submicrorodsbasedphotoresistorswitchesfabricationandelectricalcharacterization AT zubairahmad mapbisub3submicrorodsbasedphotoresistorswitchesfabricationandelectricalcharacterization |