Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells
Laser-assisted diffusion of phosphorus dopants has been investigated to realize selective emitters on mc-Si wafers. In this paper, we studied, in the presence of PSG, the effect of laser speed and power doping parameters on the sheet resistance R _Sq variation as a function of selective emitter form...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ab69c6 |
| _version_ | 1797747030225846272 |
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| author | A Moussi A Djelloul S Meziani K Bendimrad L Benharrat S Chaouchi K Bourai A Noukaz |
| author_facet | A Moussi A Djelloul S Meziani K Bendimrad L Benharrat S Chaouchi K Bourai A Noukaz |
| author_sort | A Moussi |
| collection | DOAJ |
| description | Laser-assisted diffusion of phosphorus dopants has been investigated to realize selective emitters on mc-Si wafers. In this paper, we studied, in the presence of PSG, the effect of laser speed and power doping parameters on the sheet resistance R _Sq variation as a function of selective emitter formation. Four point-probe (FPP) measurements showed that 5.5–10 W with speed 100–1500 mm s ^−1 are, respectively, the best power values to form a selective emitter with 20–40 Ω/□ typical values. Electrochemical Capacitance-Voltage (ECV) results showed that dopant concentration and junction depth increased with decreasing scan speed, resulting in lower sheet resistances. Thus, the greater the difference between the concentration of starting phosphorus and that created by laser treatment, the smaller the square R _Sq will be. Scanning Electron Microscopy (SEM) images demonstrated more pronounced patterns of laser ablation when the power is high and/or the scanning speed is low. |
| first_indexed | 2024-03-12T15:45:18Z |
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| id | doaj.art-a664480b52894b6bbd0daf6da3e44021 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:45:18Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-a664480b52894b6bbd0daf6da3e440212023-08-09T15:28:01ZengIOP PublishingMaterials Research Express2053-15912020-01-017101642610.1088/2053-1591/ab69c6Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cellsA Moussi0A Djelloul1https://orcid.org/0000-0002-2226-1987S Meziani2K Bendimrad3L Benharrat4S Chaouchi5K Bourai6A Noukaz7Centre de Recherche en Technologie des Semi-Conducteurs Pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, AlgérieCentre de Recherche en Technologie des Semi-Conducteurs Pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, AlgérieCentre de Recherche en Technologie des Semi-Conducteurs Pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, AlgérieCentre de Recherche en Technologie des Semi-Conducteurs Pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, AlgérieCentre de Recherche en Technologie des Semi-Conducteurs Pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, AlgérieCentre de Recherche en Technologie des Semi-Conducteurs Pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, AlgérieAdvanced Technologies Development Center (CDTA), Cité 20 Aout 1656, Baba Hassen, Algiers 16000, AlgeriaAdvanced Technologies Development Center (CDTA), Cité 20 Aout 1656, Baba Hassen, Algiers 16000, AlgeriaLaser-assisted diffusion of phosphorus dopants has been investigated to realize selective emitters on mc-Si wafers. In this paper, we studied, in the presence of PSG, the effect of laser speed and power doping parameters on the sheet resistance R _Sq variation as a function of selective emitter formation. Four point-probe (FPP) measurements showed that 5.5–10 W with speed 100–1500 mm s ^−1 are, respectively, the best power values to form a selective emitter with 20–40 Ω/□ typical values. Electrochemical Capacitance-Voltage (ECV) results showed that dopant concentration and junction depth increased with decreasing scan speed, resulting in lower sheet resistances. Thus, the greater the difference between the concentration of starting phosphorus and that created by laser treatment, the smaller the square R _Sq will be. Scanning Electron Microscopy (SEM) images demonstrated more pronounced patterns of laser ablation when the power is high and/or the scanning speed is low.https://doi.org/10.1088/2053-1591/ab69c6solar cellsselective emitterlaser dopingPSG |
| spellingShingle | A Moussi A Djelloul S Meziani K Bendimrad L Benharrat S Chaouchi K Bourai A Noukaz Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells Materials Research Express solar cells selective emitter laser doping PSG |
| title | Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells |
| title_full | Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells |
| title_fullStr | Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells |
| title_full_unstemmed | Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells |
| title_short | Influence of IR laser doping method on surface emitter with phosphosilicate glass for solar cells |
| title_sort | influence of ir laser doping method on surface emitter with phosphosilicate glass for solar cells |
| topic | solar cells selective emitter laser doping PSG |
| url | https://doi.org/10.1088/2053-1591/ab69c6 |
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