A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach
Modifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film placed on top of the metallic layer and stacked tog...
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MDPI AG
2021-05-01
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| Online Access: | https://www.mdpi.com/2076-3417/11/10/4353 |
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| author | Pericle Varasteanu Mihaela Kusko |
| author_facet | Pericle Varasteanu Mihaela Kusko |
| author_sort | Pericle Varasteanu |
| collection | DOAJ |
| description | Modifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film placed on top of the metallic layer and stacked together with 2D materials enhances even more sensitivity, but at the cost of worsening the plasmonic couplic strength at resonance (minimum level of reflectivity) and broadening the response. With each supplementary layer added, the complexity of optimizing the performance increases due to the extended parameter space of the sensor. This study focused on overcoming these difficulties in the design process of sensors by employing a multi-objective genetic algorithm (NSGA II) alongside a transfer matrix method (TMM) and, at the same time, optimizing the sensitivity to full width at half maximum (FWHM), and the reflectivity level at a resonance for a four layer sensor structure. Firstly, the thin semiconductor’s refractive index was optimized to obtain the maximum achievable sensitivity with a narrow FWHM and a reflectivity level at a resonance of almost zero. Secondly, it was shown that refractive indices of barium titanate (BaTiO<sub>3</sub>) and silicon (Si) are the closest to the optimal indices for the silver—graphene/WS<sub>2</sub> and MoS<sub>2</sub> modified structures, respectively. Sensitivities up to 302 deg/RIU were achieved by Ag–BaTIO<sub>3</sub>–graphene/WS<sub>2</sub> configurations with an FWHM smaller than 8 deg and a reflectivity level less than 0.5% at resonance. |
| first_indexed | 2024-03-10T11:30:53Z |
| format | Article |
| id | doaj.art-a68cd1adc24049158990439feca2f885 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T11:30:53Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-a68cd1adc24049158990439feca2f8852023-11-21T19:15:01ZengMDPI AGApplied Sciences2076-34172021-05-011110435310.3390/app11104353A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II ApproachPericle Varasteanu0Mihaela Kusko1National Institute for Research and Development in Microtechnology (IMT-Bucharest), 126A Erou Iancu Nicolae Street, 077190 Voluntari, RomaniaNational Institute for Research and Development in Microtechnology (IMT-Bucharest), 126A Erou Iancu Nicolae Street, 077190 Voluntari, RomaniaModifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film placed on top of the metallic layer and stacked together with 2D materials enhances even more sensitivity, but at the cost of worsening the plasmonic couplic strength at resonance (minimum level of reflectivity) and broadening the response. With each supplementary layer added, the complexity of optimizing the performance increases due to the extended parameter space of the sensor. This study focused on overcoming these difficulties in the design process of sensors by employing a multi-objective genetic algorithm (NSGA II) alongside a transfer matrix method (TMM) and, at the same time, optimizing the sensitivity to full width at half maximum (FWHM), and the reflectivity level at a resonance for a four layer sensor structure. Firstly, the thin semiconductor’s refractive index was optimized to obtain the maximum achievable sensitivity with a narrow FWHM and a reflectivity level at a resonance of almost zero. Secondly, it was shown that refractive indices of barium titanate (BaTiO<sub>3</sub>) and silicon (Si) are the closest to the optimal indices for the silver—graphene/WS<sub>2</sub> and MoS<sub>2</sub> modified structures, respectively. Sensitivities up to 302 deg/RIU were achieved by Ag–BaTIO<sub>3</sub>–graphene/WS<sub>2</sub> configurations with an FWHM smaller than 8 deg and a reflectivity level less than 0.5% at resonance.https://www.mdpi.com/2076-3417/11/10/4353SPR based sensorsNSGA II optimizationsensitivity enhancement |
| spellingShingle | Pericle Varasteanu Mihaela Kusko A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach Applied Sciences SPR based sensors NSGA II optimization sensitivity enhancement |
| title | A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach |
| title_full | A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach |
| title_fullStr | A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach |
| title_full_unstemmed | A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach |
| title_short | A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach |
| title_sort | multi objective optimization of 2d materials modified surface plasmon resonance spr based sensors an nsga ii approach |
| topic | SPR based sensors NSGA II optimization sensitivity enhancement |
| url | https://www.mdpi.com/2076-3417/11/10/4353 |
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