Bound excitons and bandgap engineering in violet phosphorus
Abstract Violet phosphorus (VP), the most stable phosphorus allotrope, is a van der Waals semiconductor that can be used to construct p-type nanodevices. Recently, high-quality VP crystals have been synthesized while a deep insight into their excitonic properties and bandgap tailoring approaches, wh...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-05-01
|
| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-023-00405-0 |
| _version_ | 1797811501747142656 |
|---|---|
| author | Zhenyu Sun Zhihao Cai Peng Cheng Lan Chen Xuewen Zhao Jinying Zhang Kehui Wu Baojie Feng |
| author_facet | Zhenyu Sun Zhihao Cai Peng Cheng Lan Chen Xuewen Zhao Jinying Zhang Kehui Wu Baojie Feng |
| author_sort | Zhenyu Sun |
| collection | DOAJ |
| description | Abstract Violet phosphorus (VP), the most stable phosphorus allotrope, is a van der Waals semiconductor that can be used to construct p-type nanodevices. Recently, high-quality VP crystals have been synthesized while a deep insight into their excitonic properties and bandgap tailoring approaches, which are crucial for their optoelectronic device applications, is still lacking. Here, we study the optical properties of ultrathin VP by second harmonic generation, photoluminescence, and optical absorption spectroscopy. We observed strong bound exciton emission that is 0.48 eV away from the free exciton emission, which is among the largest in 2D materials. In addition, the bandgaps of VP are highly sensitive to the number of layers and external strain, which provides convenient approaches for bandgap engineering. The strong bound exciton emission and tunable bandgaps make VP a promising material in optoelectronic devices. |
| first_indexed | 2024-03-13T07:23:30Z |
| format | Article |
| id | doaj.art-a6a4e1c8b29441ab8501f7344d58db72 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-03-13T07:23:30Z |
| publishDate | 2023-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-a6a4e1c8b29441ab8501f7344d58db722023-06-04T11:30:28ZengNature Portfolionpj 2D Materials and Applications2397-71322023-05-01711610.1038/s41699-023-00405-0Bound excitons and bandgap engineering in violet phosphorusZhenyu Sun0Zhihao Cai1Peng Cheng2Lan Chen3Xuewen Zhao4Jinying Zhang5Kehui Wu6Baojie Feng7Institute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesState Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi’an Jiaotong UniversityState Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi’an Jiaotong UniversityInstitute of Physics, Chinese Academy of SciencesInstitute of Physics, Chinese Academy of SciencesAbstract Violet phosphorus (VP), the most stable phosphorus allotrope, is a van der Waals semiconductor that can be used to construct p-type nanodevices. Recently, high-quality VP crystals have been synthesized while a deep insight into their excitonic properties and bandgap tailoring approaches, which are crucial for their optoelectronic device applications, is still lacking. Here, we study the optical properties of ultrathin VP by second harmonic generation, photoluminescence, and optical absorption spectroscopy. We observed strong bound exciton emission that is 0.48 eV away from the free exciton emission, which is among the largest in 2D materials. In addition, the bandgaps of VP are highly sensitive to the number of layers and external strain, which provides convenient approaches for bandgap engineering. The strong bound exciton emission and tunable bandgaps make VP a promising material in optoelectronic devices.https://doi.org/10.1038/s41699-023-00405-0 |
| spellingShingle | Zhenyu Sun Zhihao Cai Peng Cheng Lan Chen Xuewen Zhao Jinying Zhang Kehui Wu Baojie Feng Bound excitons and bandgap engineering in violet phosphorus npj 2D Materials and Applications |
| title | Bound excitons and bandgap engineering in violet phosphorus |
| title_full | Bound excitons and bandgap engineering in violet phosphorus |
| title_fullStr | Bound excitons and bandgap engineering in violet phosphorus |
| title_full_unstemmed | Bound excitons and bandgap engineering in violet phosphorus |
| title_short | Bound excitons and bandgap engineering in violet phosphorus |
| title_sort | bound excitons and bandgap engineering in violet phosphorus |
| url | https://doi.org/10.1038/s41699-023-00405-0 |
| work_keys_str_mv | AT zhenyusun boundexcitonsandbandgapengineeringinvioletphosphorus AT zhihaocai boundexcitonsandbandgapengineeringinvioletphosphorus AT pengcheng boundexcitonsandbandgapengineeringinvioletphosphorus AT lanchen boundexcitonsandbandgapengineeringinvioletphosphorus AT xuewenzhao boundexcitonsandbandgapengineeringinvioletphosphorus AT jinyingzhang boundexcitonsandbandgapengineeringinvioletphosphorus AT kehuiwu boundexcitonsandbandgapengineeringinvioletphosphorus AT baojiefeng boundexcitonsandbandgapengineeringinvioletphosphorus |