Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon
High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advanta...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-01-01
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| Series: | Frontiers in Chemistry |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fchem.2021.810256/full |
| _version_ | 1818752432593698816 |
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| author | Katarzyna E. Hnida-Gut Marilyne Sousa Marinus Hopstaken Steffen Reidt Kirsten Moselund Heinz Schmid |
| author_facet | Katarzyna E. Hnida-Gut Marilyne Sousa Marinus Hopstaken Steffen Reidt Kirsten Moselund Heinz Schmid |
| author_sort | Katarzyna E. Hnida-Gut |
| collection | DOAJ |
| description | High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process. |
| first_indexed | 2024-12-18T04:51:22Z |
| format | Article |
| id | doaj.art-a6ac808bb60646d083e658d2bb759b40 |
| institution | Directory Open Access Journal |
| issn | 2296-2646 |
| language | English |
| last_indexed | 2024-12-18T04:51:22Z |
| publishDate | 2022-01-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Chemistry |
| spelling | doaj.art-a6ac808bb60646d083e658d2bb759b402022-12-21T21:20:25ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462022-01-01910.3389/fchem.2021.810256810256Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on SiliconKatarzyna E. Hnida-Gut0Marilyne Sousa1Marinus Hopstaken2Steffen Reidt3Kirsten Moselund4Heinz Schmid5IBM Research Europe-Zurich, Rüschlikon, SwitzerlandIBM Research Europe-Zurich, Rüschlikon, SwitzerlandIBM T.J. Watson Research Center-Yorktown Heights, New York, NY, United StatesIBM Research Europe-Zurich, Rüschlikon, SwitzerlandIBM Research Europe-Zurich, Rüschlikon, SwitzerlandIBM Research Europe-Zurich, Rüschlikon, SwitzerlandHigh-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process.https://www.frontiersin.org/articles/10.3389/fchem.2021.810256/fullintegrationInSbelectrodepositionrecrystallizationIII-VsTASE |
| spellingShingle | Katarzyna E. Hnida-Gut Marilyne Sousa Marinus Hopstaken Steffen Reidt Kirsten Moselund Heinz Schmid Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon Frontiers in Chemistry integration InSb electrodeposition recrystallization III-Vs TASE |
| title | Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon |
| title_full | Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon |
| title_fullStr | Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon |
| title_full_unstemmed | Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon |
| title_short | Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon |
| title_sort | electrodeposition as an alternative approach for monolithic integration of insb on silicon |
| topic | integration InSb electrodeposition recrystallization III-Vs TASE |
| url | https://www.frontiersin.org/articles/10.3389/fchem.2021.810256/full |
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