A Novel Density of States (DOS) for Disordered Organic Semiconductors

In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is...

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Main Authors: Dong Qin, Jiezhi Chen, Nianduan Lu
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/14/7/1361
_version_ 1797588223672713216
author Dong Qin
Jiezhi Chen
Nianduan Lu
author_facet Dong Qin
Jiezhi Chen
Nianduan Lu
author_sort Dong Qin
collection DOAJ
description In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is closer to experimental data than traditional DOS. Moreover, we also provide a detailed method to choose the DOS parameter for better use of the proposed DOS. This paper also contains a prediction for the DOS parameters, and it has been verified by the experimental data. More importantly, the physical meaning of the proposed DOS parameter has been explained by equilibrium energy theory and transport energy theory to make this proposed model more rational. Compared with the improved DOS based on Gaussian and exponential DOS, this work is a new attempt to combine probabilistic theory with physical theory related to DOS in disordered organic semiconductors, showing great significance for the further investigation of the properties of DOS.
first_indexed 2024-03-11T00:50:05Z
format Article
id doaj.art-a6fb01f850404e848253a70fe4135554
institution Directory Open Access Journal
issn 2072-666X
language English
last_indexed 2024-03-11T00:50:05Z
publishDate 2023-06-01
publisher MDPI AG
record_format Article
series Micromachines
spelling doaj.art-a6fb01f850404e848253a70fe41355542023-11-18T20:32:22ZengMDPI AGMicromachines2072-666X2023-06-01147136110.3390/mi14071361A Novel Density of States (DOS) for Disordered Organic SemiconductorsDong Qin0Jiezhi Chen1Nianduan Lu2School of Information Science and Engineering, Shandong University, Qingdao 266237, ChinaSchool of Information Science and Engineering, Shandong University, Qingdao 266237, ChinaState Key Lab of Fabrication Technologies for Integrated Circuits & Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaIn this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is closer to experimental data than traditional DOS. Moreover, we also provide a detailed method to choose the DOS parameter for better use of the proposed DOS. This paper also contains a prediction for the DOS parameters, and it has been verified by the experimental data. More importantly, the physical meaning of the proposed DOS parameter has been explained by equilibrium energy theory and transport energy theory to make this proposed model more rational. Compared with the improved DOS based on Gaussian and exponential DOS, this work is a new attempt to combine probabilistic theory with physical theory related to DOS in disordered organic semiconductors, showing great significance for the further investigation of the properties of DOS.https://www.mdpi.com/2072-666X/14/7/1361disordered organic semiconductorsdensity of statesmobilityconcentrationelectric field
spellingShingle Dong Qin
Jiezhi Chen
Nianduan Lu
A Novel Density of States (DOS) for Disordered Organic Semiconductors
Micromachines
disordered organic semiconductors
density of states
mobility
concentration
electric field
title A Novel Density of States (DOS) for Disordered Organic Semiconductors
title_full A Novel Density of States (DOS) for Disordered Organic Semiconductors
title_fullStr A Novel Density of States (DOS) for Disordered Organic Semiconductors
title_full_unstemmed A Novel Density of States (DOS) for Disordered Organic Semiconductors
title_short A Novel Density of States (DOS) for Disordered Organic Semiconductors
title_sort novel density of states dos for disordered organic semiconductors
topic disordered organic semiconductors
density of states
mobility
concentration
electric field
url https://www.mdpi.com/2072-666X/14/7/1361
work_keys_str_mv AT dongqin anoveldensityofstatesdosfordisorderedorganicsemiconductors
AT jiezhichen anoveldensityofstatesdosfordisorderedorganicsemiconductors
AT nianduanlu anoveldensityofstatesdosfordisorderedorganicsemiconductors
AT dongqin noveldensityofstatesdosfordisorderedorganicsemiconductors
AT jiezhichen noveldensityofstatesdosfordisorderedorganicsemiconductors
AT nianduanlu noveldensityofstatesdosfordisorderedorganicsemiconductors