A Novel Density of States (DOS) for Disordered Organic Semiconductors
In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is...
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MDPI AG
2023-06-01
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Online Access: | https://www.mdpi.com/2072-666X/14/7/1361 |
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author | Dong Qin Jiezhi Chen Nianduan Lu |
author_facet | Dong Qin Jiezhi Chen Nianduan Lu |
author_sort | Dong Qin |
collection | DOAJ |
description | In this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is closer to experimental data than traditional DOS. Moreover, we also provide a detailed method to choose the DOS parameter for better use of the proposed DOS. This paper also contains a prediction for the DOS parameters, and it has been verified by the experimental data. More importantly, the physical meaning of the proposed DOS parameter has been explained by equilibrium energy theory and transport energy theory to make this proposed model more rational. Compared with the improved DOS based on Gaussian and exponential DOS, this work is a new attempt to combine probabilistic theory with physical theory related to DOS in disordered organic semiconductors, showing great significance for the further investigation of the properties of DOS. |
first_indexed | 2024-03-11T00:50:05Z |
format | Article |
id | doaj.art-a6fb01f850404e848253a70fe4135554 |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-11T00:50:05Z |
publishDate | 2023-06-01 |
publisher | MDPI AG |
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series | Micromachines |
spelling | doaj.art-a6fb01f850404e848253a70fe41355542023-11-18T20:32:22ZengMDPI AGMicromachines2072-666X2023-06-01147136110.3390/mi14071361A Novel Density of States (DOS) for Disordered Organic SemiconductorsDong Qin0Jiezhi Chen1Nianduan Lu2School of Information Science and Engineering, Shandong University, Qingdao 266237, ChinaSchool of Information Science and Engineering, Shandong University, Qingdao 266237, ChinaState Key Lab of Fabrication Technologies for Integrated Circuits & Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaIn this work, we proposed a novel theory of DOS for disordered organic semiconductors based on the frontier orbital theory and probability statistics. The proposed DOS has been verified by comparing with other DOS alternatives and experimental data, and the mobility calculated by the proposed DOS is closer to experimental data than traditional DOS. Moreover, we also provide a detailed method to choose the DOS parameter for better use of the proposed DOS. This paper also contains a prediction for the DOS parameters, and it has been verified by the experimental data. More importantly, the physical meaning of the proposed DOS parameter has been explained by equilibrium energy theory and transport energy theory to make this proposed model more rational. Compared with the improved DOS based on Gaussian and exponential DOS, this work is a new attempt to combine probabilistic theory with physical theory related to DOS in disordered organic semiconductors, showing great significance for the further investigation of the properties of DOS.https://www.mdpi.com/2072-666X/14/7/1361disordered organic semiconductorsdensity of statesmobilityconcentrationelectric field |
spellingShingle | Dong Qin Jiezhi Chen Nianduan Lu A Novel Density of States (DOS) for Disordered Organic Semiconductors Micromachines disordered organic semiconductors density of states mobility concentration electric field |
title | A Novel Density of States (DOS) for Disordered Organic Semiconductors |
title_full | A Novel Density of States (DOS) for Disordered Organic Semiconductors |
title_fullStr | A Novel Density of States (DOS) for Disordered Organic Semiconductors |
title_full_unstemmed | A Novel Density of States (DOS) for Disordered Organic Semiconductors |
title_short | A Novel Density of States (DOS) for Disordered Organic Semiconductors |
title_sort | novel density of states dos for disordered organic semiconductors |
topic | disordered organic semiconductors density of states mobility concentration electric field |
url | https://www.mdpi.com/2072-666X/14/7/1361 |
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