Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells
CuSbS2, as a direct bandgap semiconductor, is a promising candidate for fabricating flexible thin-film solar cells due to its low grain growth temperature (300°C–450°C). Uniform and highly crystalline CuSbS2 thin films are crucial to improving device performance. However, uniform CuSbS2 is difficult...
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-01-01
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| Series: | Frontiers in Materials |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.818596/full |
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| author | Aimei Zhao Yanping Wang Bing Li Dongmei Xiang Zhuo Peng Yujie Yuan Yupeng Xing Liyong Yao Jinlian Bi Wei Li |
| author_facet | Aimei Zhao Yanping Wang Bing Li Dongmei Xiang Zhuo Peng Yujie Yuan Yupeng Xing Liyong Yao Jinlian Bi Wei Li |
| author_sort | Aimei Zhao |
| collection | DOAJ |
| description | CuSbS2, as a direct bandgap semiconductor, is a promising candidate for fabricating flexible thin-film solar cells due to its low grain growth temperature (300°C–450°C). Uniform and highly crystalline CuSbS2 thin films are crucial to improving device performance. However, uniform CuSbS2 is difficult to obtain during electrodeposition and post-sulfurization due to the “dendritic” deposition of Cu on Mo substrates. In this study, Sb/Cu layers were sequentially pulse electrodeposited on Mo substrates. By adjusting the pulse parameters, smooth and uniform Sb layers were prepared on Mo, and a flat Cu layer was obtained on Sb without any dendritic clusters. A two-step annealing process was employed to fabricate CuSbS2 thin films. The effects of temperature on phases and morphologies were investigated. CuSbS2 thin films with good crystallinity were obtained at 360°C. As the annealing temperature increased, the crystallinity of the films decreased. The CuSbS2 phase transformed into a Cu3SbS4 phase with the temperature increase to 400°C. Finally, a 0.90% efficient solar cell was obtained using the CuSbS2 thin films annealed at 360°C. |
| first_indexed | 2024-04-11T20:40:53Z |
| format | Article |
| id | doaj.art-a6fd0740d299410cbe674da5a80cb5ea |
| institution | Directory Open Access Journal |
| issn | 2296-8016 |
| language | English |
| last_indexed | 2024-04-11T20:40:53Z |
| publishDate | 2022-01-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Materials |
| spelling | doaj.art-a6fd0740d299410cbe674da5a80cb5ea2022-12-22T04:04:13ZengFrontiers Media S.A.Frontiers in Materials2296-80162022-01-01810.3389/fmats.2021.818596818596Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar CellsAimei Zhao0Yanping Wang1Bing Li2Dongmei Xiang3Zhuo Peng4Yujie Yuan5Yupeng Xing6Liyong Yao7Jinlian Bi8Wei Li9Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Institute of Power Source, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaTianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, ChinaCuSbS2, as a direct bandgap semiconductor, is a promising candidate for fabricating flexible thin-film solar cells due to its low grain growth temperature (300°C–450°C). Uniform and highly crystalline CuSbS2 thin films are crucial to improving device performance. However, uniform CuSbS2 is difficult to obtain during electrodeposition and post-sulfurization due to the “dendritic” deposition of Cu on Mo substrates. In this study, Sb/Cu layers were sequentially pulse electrodeposited on Mo substrates. By adjusting the pulse parameters, smooth and uniform Sb layers were prepared on Mo, and a flat Cu layer was obtained on Sb without any dendritic clusters. A two-step annealing process was employed to fabricate CuSbS2 thin films. The effects of temperature on phases and morphologies were investigated. CuSbS2 thin films with good crystallinity were obtained at 360°C. As the annealing temperature increased, the crystallinity of the films decreased. The CuSbS2 phase transformed into a Cu3SbS4 phase with the temperature increase to 400°C. Finally, a 0.90% efficient solar cell was obtained using the CuSbS2 thin films annealed at 360°C.https://www.frontiersin.org/articles/10.3389/fmats.2021.818596/fullCuSbS2pulse electrodepositionSb/Cu layerpost-sulfurizationthin-film solar cell |
| spellingShingle | Aimei Zhao Yanping Wang Bing Li Dongmei Xiang Zhuo Peng Yujie Yuan Yupeng Xing Liyong Yao Jinlian Bi Wei Li Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells Frontiers in Materials CuSbS2 pulse electrodeposition Sb/Cu layer post-sulfurization thin-film solar cell |
| title | Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells |
| title_full | Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells |
| title_fullStr | Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells |
| title_full_unstemmed | Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells |
| title_short | Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells |
| title_sort | sulfurization of electrodeposited sb cu precursors for cusbs2 potential absorber materials for thin film solar cells |
| topic | CuSbS2 pulse electrodeposition Sb/Cu layer post-sulfurization thin-film solar cell |
| url | https://www.frontiersin.org/articles/10.3389/fmats.2021.818596/full |
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