CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications
This study presents a complementary metal–oxide–semiconductor (CMOS) variable-gain low-noise amplifier (VGLNA) employing a transformer-based noise cancelling technique, applicable for fifth-generation new radio frequency range 2 communication. In the proposed design, gain contr...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10336809/ |
| _version_ | 1797401033251487744 |
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| author | Segyeong Kim Eunsoo Kim Junhyeop Kim Junghwan Han |
| author_facet | Segyeong Kim Eunsoo Kim Junhyeop Kim Junghwan Han |
| author_sort | Segyeong Kim |
| collection | DOAJ |
| description | This study presents a complementary metal–oxide–semiconductor (CMOS) variable-gain low-noise amplifier (VGLNA) employing a transformer-based noise cancelling technique, applicable for fifth-generation new radio frequency range 2 communication. In the proposed design, gain controllability is realized by combining the in-phase main and current-steering path signals through a transformer load whose coupling coefficient is less than unity. Additionally, the noise contribution from cascode devices can be diminished through a transformer-based noise cancelling technique in low-gain modes. Consequently, an enhanced noise performance is achieved as the gain of the VGLNA is lowered. The proposed design is fabricated in a 65-nm CMOS process. At 28 GHz, the implemented VGLNA attains gains and noise figures of 12.1 to 2.7 dB and 3.55 to 4.3 dB, respectively. The design draws a bias current of 10.6 mA with a 1 V nominal supply and occupies a die size of 0.13 mm2, excluding bonding pads. |
| first_indexed | 2024-03-09T02:04:01Z |
| format | Article |
| id | doaj.art-a742559e62504a5892f6a885f749185e |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-09T02:04:01Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-a742559e62504a5892f6a885f749185e2023-12-08T00:04:10ZengIEEEIEEE Access2169-35362023-01-011113529513530310.1109/ACCESS.2023.333818810336809CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 ApplicationsSegyeong Kim0Eunsoo Kim1https://orcid.org/0009-0006-7077-7474Junhyeop Kim2Junghwan Han3https://orcid.org/0000-0002-3122-8097Department of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South KoreaDepartment of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South KoreaDepartment of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South KoreaDepartment of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South KoreaThis study presents a complementary metal–oxide–semiconductor (CMOS) variable-gain low-noise amplifier (VGLNA) employing a transformer-based noise cancelling technique, applicable for fifth-generation new radio frequency range 2 communication. In the proposed design, gain controllability is realized by combining the in-phase main and current-steering path signals through a transformer load whose coupling coefficient is less than unity. Additionally, the noise contribution from cascode devices can be diminished through a transformer-based noise cancelling technique in low-gain modes. Consequently, an enhanced noise performance is achieved as the gain of the VGLNA is lowered. The proposed design is fabricated in a 65-nm CMOS process. At 28 GHz, the implemented VGLNA attains gains and noise figures of 12.1 to 2.7 dB and 3.55 to 4.3 dB, respectively. The design draws a bias current of 10.6 mA with a 1 V nominal supply and occupies a die size of 0.13 mm2, excluding bonding pads.https://ieeexplore.ieee.org/document/10336809/Complementary metal–oxide–semiconductor (CMOS)current-steeringfifth-generation (5G) new radio (NR)frequency range 2 (FR2)low-noise amplifier (LNA)noise cancelling |
| spellingShingle | Segyeong Kim Eunsoo Kim Junhyeop Kim Junghwan Han CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications IEEE Access Complementary metal–oxide–semiconductor (CMOS) current-steering fifth-generation (5G) new radio (NR) frequency range 2 (FR2) low-noise amplifier (LNA) noise cancelling |
| title | CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications |
| title_full | CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications |
| title_fullStr | CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications |
| title_full_unstemmed | CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications |
| title_short | CMOS Variable-Gain Low-Noise Amplifier Adopting Transformer-Based Noise Cancelling Technique for 5G NR FR2 Applications |
| title_sort | cmos variable gain low noise amplifier adopting transformer based noise cancelling technique for 5g nr fr2 applications |
| topic | Complementary metal–oxide–semiconductor (CMOS) current-steering fifth-generation (5G) new radio (NR) frequency range 2 (FR2) low-noise amplifier (LNA) noise cancelling |
| url | https://ieeexplore.ieee.org/document/10336809/ |
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