Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal
The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-10-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/9/10/774 |
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| author | Alexander Yelisseyev Vladislav Fedyaj Victor Simonov Ludmila Isaenko Sergey Lobanov Alexander Shklyaev Andrey Simanchuk Sergey Babin Alexander Dostovalov |
| author_facet | Alexander Yelisseyev Vladislav Fedyaj Victor Simonov Ludmila Isaenko Sergey Lobanov Alexander Shklyaev Andrey Simanchuk Sergey Babin Alexander Dostovalov |
| author_sort | Alexander Yelisseyev |
| collection | DOAJ |
| description | The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures. |
| first_indexed | 2024-03-09T19:33:52Z |
| format | Article |
| id | doaj.art-a7758b488e724c7bb583632d325ccca5 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T19:33:52Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-a7758b488e724c7bb583632d325ccca52023-11-24T02:02:53ZengMDPI AGPhotonics2304-67322022-10-0191077410.3390/photonics9100774Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe CrystalAlexander Yelisseyev0Vladislav Fedyaj1Victor Simonov2Ludmila Isaenko3Sergey Lobanov4Alexander Shklyaev5Andrey Simanchuk6Sergey Babin7Alexander Dostovalov8Faculty of Physics, Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, RussiaFaculty of Physics, Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, RussiaInstitute of Automation and Electrometry of the SB RAS, 1 Acad. Koptyug Ave., 630090 Novosibirsk, RussiaFaculty of Physics, Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, RussiaFaculty of Physics, Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, RussiaFaculty of Physics, Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, RussiaInstitute of Automation and Electrometry of the SB RAS, 1 Acad. Koptyug Ave., 630090 Novosibirsk, RussiaFaculty of Physics, Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk, RussiaInstitute of Automation and Electrometry of the SB RAS, 1 Acad. Koptyug Ave., 630090 Novosibirsk, RussiaThe development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures.https://www.mdpi.com/2304-6732/9/10/774GaSe crystalantireflection microstructuresfemtosecond laser ablation |
| spellingShingle | Alexander Yelisseyev Vladislav Fedyaj Victor Simonov Ludmila Isaenko Sergey Lobanov Alexander Shklyaev Andrey Simanchuk Sergey Babin Alexander Dostovalov Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal Photonics GaSe crystal antireflection microstructures femtosecond laser ablation |
| title | Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal |
| title_full | Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal |
| title_fullStr | Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal |
| title_full_unstemmed | Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal |
| title_short | Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal |
| title_sort | femtosecond laser direct writing of antireflection microstructures on the front and back sides of a gase crystal |
| topic | GaSe crystal antireflection microstructures femtosecond laser ablation |
| url | https://www.mdpi.com/2304-6732/9/10/774 |
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