Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance
It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielec...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/1/75 |
| _version_ | 1797498138285572096 |
|---|---|
| author | Maksim A. Pavlenko Yuri A. Tikhonov Anna G. Razumnaya Valerii M. Vinokur Igor A. Lukyanchuk |
| author_facet | Maksim A. Pavlenko Yuri A. Tikhonov Anna G. Razumnaya Valerii M. Vinokur Igor A. Lukyanchuk |
| author_sort | Maksim A. Pavlenko |
| collection | DOAJ |
| description | It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO<sub>3</sub>/PbTiO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors. |
| first_indexed | 2024-03-10T03:29:11Z |
| format | Article |
| id | doaj.art-a78bbf3bc7164cfdb8496ab10b6f2fcb |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:29:11Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-a78bbf3bc7164cfdb8496ab10b6f2fcb2023-11-23T12:01:07ZengMDPI AGNanomaterials2079-49912021-12-011217510.3390/nano12010075Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative CapacitanceMaksim A. Pavlenko0Yuri A. Tikhonov1Anna G. Razumnaya2Valerii M. Vinokur3Igor A. Lukyanchuk4Faculty of Physics, Southern Federal University, 344090 Rostov-on-Don, RussiaFaculty of Physics, Southern Federal University, 344090 Rostov-on-Don, RussiaFaculty of Physics, Southern Federal University, 344090 Rostov-on-Don, RussiaTerra Quantum AG, CH-9400 Rorschach, SwitzerlandFaculty of Physics, Southern Federal University, 344090 Rostov-on-Don, RussiaIt is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO<sub>3</sub>/PbTiO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.https://www.mdpi.com/2079-4991/12/1/75ferroelectricsheterostructuresdomainsnegative capacitance |
| spellingShingle | Maksim A. Pavlenko Yuri A. Tikhonov Anna G. Razumnaya Valerii M. Vinokur Igor A. Lukyanchuk Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance Nanomaterials ferroelectrics heterostructures domains negative capacitance |
| title | Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance |
| title_full | Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance |
| title_fullStr | Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance |
| title_full_unstemmed | Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance |
| title_short | Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance |
| title_sort | temperature dependence of dielectric properties of ferroelectric heterostructures with domain provided negative capacitance |
| topic | ferroelectrics heterostructures domains negative capacitance |
| url | https://www.mdpi.com/2079-4991/12/1/75 |
| work_keys_str_mv | AT maksimapavlenko temperaturedependenceofdielectricpropertiesofferroelectricheterostructureswithdomainprovidednegativecapacitance AT yuriatikhonov temperaturedependenceofdielectricpropertiesofferroelectricheterostructureswithdomainprovidednegativecapacitance AT annagrazumnaya temperaturedependenceofdielectricpropertiesofferroelectricheterostructureswithdomainprovidednegativecapacitance AT valeriimvinokur temperaturedependenceofdielectricpropertiesofferroelectricheterostructureswithdomainprovidednegativecapacitance AT igoralukyanchuk temperaturedependenceofdielectricpropertiesofferroelectricheterostructureswithdomainprovidednegativecapacitance |