EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
The results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/495 |
| _version_ | 1797881100597460992 |
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| author | D. A. Yatsyna D. B. Migas Y. S. Arsitov A. B. Filonov B. S. Kolosnitsyn |
| author_facet | D. A. Yatsyna D. B. Migas Y. S. Arsitov A. B. Filonov B. S. Kolosnitsyn |
| author_sort | D. A. Yatsyna |
| collection | DOAJ |
| description | The results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets the formation of small-sized {112} edges between adjacent {011} facets results in a stable structure and removes the surface states in the band-gap area without the hydrogen passivation. |
| first_indexed | 2024-04-10T03:14:49Z |
| format | Article |
| id | doaj.art-a7a096ffd5e34b6393855d2a50daacab |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:14:49Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-a7a096ffd5e34b6393855d2a50daacab2023-03-13T07:33:15ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01037782494EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRESD. A. Yatsyna0D. B. Migas1Y. S. Arsitov2A. B. Filonov3B. S. Kolosnitsyn4Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиThe results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets the formation of small-sized {112} edges between adjacent {011} facets results in a stable structure and removes the surface states in the band-gap area without the hydrogen passivation.https://doklady.bsuir.by/jour/article/view/495а<sup>iii</sup>-b<sup>v</sup> наношнурыморфология и зонная структура наношнуров |
| spellingShingle | D. A. Yatsyna D. B. Migas Y. S. Arsitov A. B. Filonov B. S. Kolosnitsyn EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki а<sup>iii</sup>-b<sup>v</sup> наношнуры морфология и зонная структура наношнуров |
| title | EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES |
| title_full | EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES |
| title_fullStr | EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES |
| title_full_unstemmed | EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES |
| title_short | EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES |
| title_sort | effect of morphology on electronic properties of the 111 oriented gaas gap gasb inas inp and insb nanowires |
| topic | а<sup>iii</sup>-b<sup>v</sup> наношнуры морфология и зонная структура наношнуров |
| url | https://doklady.bsuir.by/jour/article/view/495 |
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