EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES

The results of calculations by means of the first principles methods of the -oriented GaP, GaAs, GaSb, InP, InAs, and InSb nanowires with zince-blende structure show that the morphology of nanowires affects their electronic properties. It has been established that for nanowires with {011} facets th...

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Bibliographic Details
Main Authors: D. A. Yatsyna, D. B. Migas, Y. S. Arsitov, A. B. Filonov, B. S. Kolosnitsyn
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
а<sup>iii</sup>-b<sup>v</sup> наношнуры
морфология и зонная структура наношнуров
Online Access:https://doklady.bsuir.by/jour/article/view/495

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