A review on the GaN-on-Si power electronic devices
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The comprehensive review has discussed the crucia...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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KeAi Communications Co. Ltd.
2022-05-01
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| Series: | Fundamental Research |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667325821002867 |
| _version_ | 1797976316238102528 |
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| author | Yaozong Zhong Jinwei Zhang Shan Wu Lifang Jia Xuelin Yang Yang Liu Yun Zhang Qian Sun |
| author_facet | Yaozong Zhong Jinwei Zhang Shan Wu Lifang Jia Xuelin Yang Yang Liu Yun Zhang Qian Sun |
| author_sort | Yaozong Zhong |
| collection | DOAJ |
| description | The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study, and device fabrication including normally off solutions like Cascode, trench MIS-gate, and p-GaN gate. Device reliability and other common fabrication issues in GaN high electron mobility transistors (HEMTs) are also discussed. Lastly, we give an outlook on the GaN-on-Si power devices from two aspects, namely high frequency, and high power GaN ICs, and GaN vertical power devices. |
| first_indexed | 2024-04-11T04:49:02Z |
| format | Article |
| id | doaj.art-a7c0f698b5e64e4886f7cd43341c10ef |
| institution | Directory Open Access Journal |
| issn | 2667-3258 |
| language | English |
| last_indexed | 2024-04-11T04:49:02Z |
| publishDate | 2022-05-01 |
| publisher | KeAi Communications Co. Ltd. |
| record_format | Article |
| series | Fundamental Research |
| spelling | doaj.art-a7c0f698b5e64e4886f7cd43341c10ef2022-12-27T04:42:54ZengKeAi Communications Co. Ltd.Fundamental Research2667-32582022-05-0123462475A review on the GaN-on-Si power electronic devicesYaozong Zhong0Jinwei Zhang1Shan Wu2Lifang Jia3Xuelin Yang4Yang Liu5Yun Zhang6Qian Sun7Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, ChinaSchool of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaInstitute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; Corresponding authors.School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China; Corresponding authors.Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; Corresponding authors.Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China; Corresponding authors.The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study, and device fabrication including normally off solutions like Cascode, trench MIS-gate, and p-GaN gate. Device reliability and other common fabrication issues in GaN high electron mobility transistors (HEMTs) are also discussed. Lastly, we give an outlook on the GaN-on-Si power devices from two aspects, namely high frequency, and high power GaN ICs, and GaN vertical power devices.http://www.sciencedirect.com/science/article/pii/S2667325821002867GaN-on-SiEpitaxyPower deviceTransistorDiodeEnhancement mode |
| spellingShingle | Yaozong Zhong Jinwei Zhang Shan Wu Lifang Jia Xuelin Yang Yang Liu Yun Zhang Qian Sun A review on the GaN-on-Si power electronic devices Fundamental Research GaN-on-Si Epitaxy Power device Transistor Diode Enhancement mode |
| title | A review on the GaN-on-Si power electronic devices |
| title_full | A review on the GaN-on-Si power electronic devices |
| title_fullStr | A review on the GaN-on-Si power electronic devices |
| title_full_unstemmed | A review on the GaN-on-Si power electronic devices |
| title_short | A review on the GaN-on-Si power electronic devices |
| title_sort | review on the gan on si power electronic devices |
| topic | GaN-on-Si Epitaxy Power device Transistor Diode Enhancement mode |
| url | http://www.sciencedirect.com/science/article/pii/S2667325821002867 |
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