Quantum spin Hall phase in GeSn heterostructures on silicon
Quantum phases of solid-state electron systems can sustain exotic phenomena and a very rich spin physics. We utilize model-solid theory to show that Ge_{1−x}Sn_{x} alloys, an emerging group IV semiconductor, can be engineered into heterostructures that demonstrate a broken-gap alignment. Furthermore...
Main Authors: | B. M. Ferrari, F. Marcantonio, F. Murphy-Armando, M. Virgilio, F. Pezzoli |
---|---|
Format: | Article |
Language: | English |
Published: |
American Physical Society
2023-05-01
|
Series: | Physical Review Research |
Online Access: | http://doi.org/10.1103/PhysRevResearch.5.L022035 |
Similar Items
-
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
by: Nils von den Driesch, et al.
Published: (2018-06-01) -
“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
by: Guo-En Chang, et al.
Published: (2023-08-01) -
Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications
by: Pin-Hao Lin, et al.
Published: (2024-02-01) -
Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
by: Mourad Baira, et al.
Published: (2019-03-01) -
Structural Property Study for GeSn Thin Films
by: Liyao Zhang, et al.
Published: (2020-08-01)