Ohmic contacts of Au and Ag metals to n-type GdN thin films
The rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semic...
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| Format: | Article |
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AIMS Press
2015-05-01
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| Series: | AIMS Materials Science |
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| Online Access: | http://www.aimspress.com/Materials/article/210/fulltext.html |
| _version_ | 1818912610140028928 |
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| author | Felicia Ullstad Jay R. Chan Harry Warring Natalie Plank Ben Ruck Joe Trodahl Franck Natali |
| author_facet | Felicia Ullstad Jay R. Chan Harry Warring Natalie Plank Ben Ruck Joe Trodahl Franck Natali |
| author_sort | Felicia Ullstad |
| collection | DOAJ |
| description | The rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semiconducting GdN layers between pre-deposited contacts made of Cr/Au and Cr/Ag. The resistivity of the GdN layers ranges from 4.4×10<sup>-4</sup> Ωcm to 3.1×10<sup>-2</sup> Ωcm depending on the nitrogen pressure during the growth. The electrical properties of metal/n-type GdN/metal planar junctions are investigated as a function of the temperature. The current voltage characteristics of the junctions were linear for temperatures ranging from 300 K down to 5 K, suggesting an ohmic contact between the Au or Ag metal and the n-type GdN layer. |
| first_indexed | 2024-12-19T23:17:20Z |
| format | Article |
| id | doaj.art-a7f643ed6142442fbdbf80a90c6d7ffd |
| institution | Directory Open Access Journal |
| issn | 2372-0484 |
| language | English |
| last_indexed | 2024-12-19T23:17:20Z |
| publishDate | 2015-05-01 |
| publisher | AIMS Press |
| record_format | Article |
| series | AIMS Materials Science |
| spelling | doaj.art-a7f643ed6142442fbdbf80a90c6d7ffd2022-12-21T20:02:04ZengAIMS PressAIMS Materials Science2372-04842015-05-0122798510.3934/matersci.2015.2.7920150204Ohmic contacts of Au and Ag metals to n-type GdN thin filmsFelicia Ullstad0Jay R. Chan1Harry Warring2Natalie Plank3Ben Ruck4Joe Trodahl5Franck Natali6The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, PO Box 600, Wellington, New ZealandThe rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semiconducting GdN layers between pre-deposited contacts made of Cr/Au and Cr/Ag. The resistivity of the GdN layers ranges from 4.4×10<sup>-4</sup> Ωcm to 3.1×10<sup>-2</sup> Ωcm depending on the nitrogen pressure during the growth. The electrical properties of metal/n-type GdN/metal planar junctions are investigated as a function of the temperature. The current voltage characteristics of the junctions were linear for temperatures ranging from 300 K down to 5 K, suggesting an ohmic contact between the Au or Ag metal and the n-type GdN layer.http://www.aimspress.com/Materials/article/210/fulltext.htmlrare-earth nitridesGdNspintronicsplanar heterojunctions |
| spellingShingle | Felicia Ullstad Jay R. Chan Harry Warring Natalie Plank Ben Ruck Joe Trodahl Franck Natali Ohmic contacts of Au and Ag metals to n-type GdN thin films AIMS Materials Science rare-earth nitrides GdN spintronics planar heterojunctions |
| title | Ohmic contacts of Au and Ag metals to n-type GdN thin films |
| title_full | Ohmic contacts of Au and Ag metals to n-type GdN thin films |
| title_fullStr | Ohmic contacts of Au and Ag metals to n-type GdN thin films |
| title_full_unstemmed | Ohmic contacts of Au and Ag metals to n-type GdN thin films |
| title_short | Ohmic contacts of Au and Ag metals to n-type GdN thin films |
| title_sort | ohmic contacts of au and ag metals to n type gdn thin films |
| topic | rare-earth nitrides GdN spintronics planar heterojunctions |
| url | http://www.aimspress.com/Materials/article/210/fulltext.html |
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