Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities
A new surface profilometry technique is proposed for profiling a wafer surface with both diffuse and specular reflective properties. Most moiré projection scanning techniques using triangulation principle work effectively on diffuse reflective surfaces, on which the reflected light beams ar...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-05-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/9/10/2060 |
| _version_ | 1818989699001221120 |
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| author | Liang-Chia Chen Duc-Hieu Duong Chin-Sheng Chen |
| author_facet | Liang-Chia Chen Duc-Hieu Duong Chin-Sheng Chen |
| author_sort | Liang-Chia Chen |
| collection | DOAJ |
| description | A new surface profilometry technique is proposed for profiling a wafer surface with both diffuse and specular reflective properties. Most moiré projection scanning techniques using triangulation principle work effectively on diffuse reflective surfaces, on which the reflected light beams are assumed to be well captured by optical sensors. In reality, this assumption is no longer valid when measuring a semiconductor wafer surface having both diffuse and specular reflectivities. To resolve the above problem, the proposed technique uses a dual optical sensing configuration by engaging two optical sensors at two different viewing angles, with one acquiring diffuse reflective light and the other detecting at the same time specular surface light for achieving simultaneous full-field surface profilometry. The deformed fringes measured by both sensors could be further transformed into a 3-D profile and merged seamlessly for full-field surface reconstruction. Several calibration targets and industrial parts were measured to evaluate the feasibility and accuracy of the developed technique. Experimental results showed that the technique can effectively detect diffuse and specular light with repeatability of one standard deviation below 0.3 µm on a specular surface and 2.0 µm on a diffuse wafer surface when the vertical measuring range reaches 1.0 mm. The present findings indicate that the proposed technique is effective for 3-D microscale surface profilometry in in-situ semiconductor automated optical inspection (AOI). |
| first_indexed | 2024-12-20T19:42:37Z |
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| id | doaj.art-a80a6dd985b047709ef8850bbe34399b |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-20T19:42:37Z |
| publishDate | 2019-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-a80a6dd985b047709ef8850bbe34399b2022-12-21T19:28:29ZengMDPI AGApplied Sciences2076-34172019-05-01910206010.3390/app9102060app9102060Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant ReflectivitiesLiang-Chia Chen0Duc-Hieu Duong1Chin-Sheng Chen2Department of Mechanical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Rd, Da’an District, Taipei City 10617, TaiwanGraduate Institute of Automation Technology, College of Mechanical and Electrical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhong-Xiao E. Rd, Da’an District, Taipei City 10608, TaiwanGraduate Institute of Automation Technology, College of Mechanical and Electrical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhong-Xiao E. Rd, Da’an District, Taipei City 10608, TaiwanA new surface profilometry technique is proposed for profiling a wafer surface with both diffuse and specular reflective properties. Most moiré projection scanning techniques using triangulation principle work effectively on diffuse reflective surfaces, on which the reflected light beams are assumed to be well captured by optical sensors. In reality, this assumption is no longer valid when measuring a semiconductor wafer surface having both diffuse and specular reflectivities. To resolve the above problem, the proposed technique uses a dual optical sensing configuration by engaging two optical sensors at two different viewing angles, with one acquiring diffuse reflective light and the other detecting at the same time specular surface light for achieving simultaneous full-field surface profilometry. The deformed fringes measured by both sensors could be further transformed into a 3-D profile and merged seamlessly for full-field surface reconstruction. Several calibration targets and industrial parts were measured to evaluate the feasibility and accuracy of the developed technique. Experimental results showed that the technique can effectively detect diffuse and specular light with repeatability of one standard deviation below 0.3 µm on a specular surface and 2.0 µm on a diffuse wafer surface when the vertical measuring range reaches 1.0 mm. The present findings indicate that the proposed technique is effective for 3-D microscale surface profilometry in in-situ semiconductor automated optical inspection (AOI).https://www.mdpi.com/2076-3417/9/10/2060semiconductorsurface profilometrymoiré projection3-D measurementautomated optical inspection (AOI) |
| spellingShingle | Liang-Chia Chen Duc-Hieu Duong Chin-Sheng Chen Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities Applied Sciences semiconductor surface profilometry moiré projection 3-D measurement automated optical inspection (AOI) |
| title | Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities |
| title_full | Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities |
| title_fullStr | Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities |
| title_full_unstemmed | Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities |
| title_short | Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities |
| title_sort | optical 3 d profilometry for measuring semiconductor wafer surfaces with extremely variant reflectivities |
| topic | semiconductor surface profilometry moiré projection 3-D measurement automated optical inspection (AOI) |
| url | https://www.mdpi.com/2076-3417/9/10/2060 |
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