Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films
Nonstoichiometric GeSi<sub>x</sub>O<sub>y</sub> glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO<sub>2</sub>, SiO, SiO<sub>2</sub>, or Ge powders were co-evapora...
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MDPI AG
2023-02-01
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| Online Access: | https://www.mdpi.com/2079-9292/12/4/873 |
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| author | Ivan D. Yushkov Liping Yin Gennadiy N. Kamaev Igor P. Prosvirin Pavel V. Geydt Michel Vergnat Vladimir A. Volodin |
| author_facet | Ivan D. Yushkov Liping Yin Gennadiy N. Kamaev Igor P. Prosvirin Pavel V. Geydt Michel Vergnat Vladimir A. Volodin |
| author_sort | Ivan D. Yushkov |
| collection | DOAJ |
| description | Nonstoichiometric GeSi<sub>x</sub>O<sub>y</sub> glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO<sub>2</sub>, SiO, SiO<sub>2</sub>, or Ge powders were co-evaporated and deposited onto a cold (100 °C) p<sup>+</sup>-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples were studied by Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was deposited as the top electrode, and memristor metal–insulator–semiconductor (MIS) structures were fabricated. The current–voltage characteristics (I–V), as well as the resistive switching cycles of the MIS, have been studied. Reversible resistive switching (memristor effect) was observed for one-layer GeSi<sub>0.9</sub>O<sub>2.8</sub>, two-layer GeSi<sub>0.9</sub>O<sub>1.8</sub>/GeSi<sub>0.9</sub>O<sub>2.8</sub> and GeSi<sub>0.9</sub>O<sub>1.8</sub>/SiO, and three-layer SiO<sub>2</sub>/a–Ge/GeSi<sub>0.9</sub>O<sub>2.8</sub> MIS structures. For a one-layer MIS structure, the number of rewriting cycles reached several thousand, while the memory window (the ratio of currents in the ON and OFF states) remained at 1–2 orders of magnitude. Intermediate resistance states were observed in many-layer structures. These states may be promising for use in multi-bit memristors and for simulating neural networks. In the three-layer MIS structure, resistive switching took place quite smoothly, and hysteresis was observed in the I–V characteristics; such a structure can be used as an “analog” memristor. |
| first_indexed | 2024-03-11T08:55:10Z |
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| issn | 2079-9292 |
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| spelling | doaj.art-a8102ac0d7f740e5a01037f489f2be6f2023-11-16T20:11:18ZengMDPI AGElectronics2079-92922023-02-0112487310.3390/electronics12040873Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass FilmsIvan D. Yushkov0Liping Yin1Gennadiy N. Kamaev2Igor P. Prosvirin3Pavel V. Geydt4Michel Vergnat5Vladimir A. Volodin6Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, RussiaLaboratory of Functional Diagnostics of Low–Dimensional Structures for Nanoelectronics, Novosibirsk State University, Pirogova Str. 2, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, RussiaBoreskov Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences, Prospect Lavrentieva, 5, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, RussiaCNRS, IJL, Université de Lorraine, F-54000 Nancy, FranceRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, RussiaNonstoichiometric GeSi<sub>x</sub>O<sub>y</sub> glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO<sub>2</sub>, SiO, SiO<sub>2</sub>, or Ge powders were co-evaporated and deposited onto a cold (100 °C) p<sup>+</sup>-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples were studied by Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was deposited as the top electrode, and memristor metal–insulator–semiconductor (MIS) structures were fabricated. The current–voltage characteristics (I–V), as well as the resistive switching cycles of the MIS, have been studied. Reversible resistive switching (memristor effect) was observed for one-layer GeSi<sub>0.9</sub>O<sub>2.8</sub>, two-layer GeSi<sub>0.9</sub>O<sub>1.8</sub>/GeSi<sub>0.9</sub>O<sub>2.8</sub> and GeSi<sub>0.9</sub>O<sub>1.8</sub>/SiO, and three-layer SiO<sub>2</sub>/a–Ge/GeSi<sub>0.9</sub>O<sub>2.8</sub> MIS structures. For a one-layer MIS structure, the number of rewriting cycles reached several thousand, while the memory window (the ratio of currents in the ON and OFF states) remained at 1–2 orders of magnitude. Intermediate resistance states were observed in many-layer structures. These states may be promising for use in multi-bit memristors and for simulating neural networks. In the three-layer MIS structure, resistive switching took place quite smoothly, and hysteresis was observed in the I–V characteristics; such a structure can be used as an “analog” memristor.https://www.mdpi.com/2079-9292/12/4/873memristorgermanosilicate glassgermaniumresistance statesthin films |
| spellingShingle | Ivan D. Yushkov Liping Yin Gennadiy N. Kamaev Igor P. Prosvirin Pavel V. Geydt Michel Vergnat Vladimir A. Volodin Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films Electronics memristor germanosilicate glass germanium resistance states thin films |
| title | Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films |
| title_full | Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films |
| title_fullStr | Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films |
| title_full_unstemmed | Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films |
| title_short | Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films |
| title_sort | memristors based on many layer non stoichiometric germanosilicate glass films |
| topic | memristor germanosilicate glass germanium resistance states thin films |
| url | https://www.mdpi.com/2079-9292/12/4/873 |
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