Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films
Nonstoichiometric GeSi<sub>x</sub>O<sub>y</sub> glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO<sub>2</sub>, SiO, SiO<sub>2</sub>, or Ge powders were co-evapora...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/4/873 |