Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most...
| Հիմնական հեղինակներ: | , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
| Հրապարակվել է: |
MDPI AG
2020-11-01
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| Շարք: | Nanomaterials |
| Խորագրեր: | |
| Առցանց հասանելիություն: | https://www.mdpi.com/2079-4991/10/11/2226 |