Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides
We report on low-temperature and low-pressure deposition conditions of 140 °C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) cha...
Main Authors: | Dawson B. Bonneville, Jeremy W. Miller, Caitlin Smyth, Peter Mascher, Jonathan D. B. Bradley |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-02-01
|
Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/11/5/2110 |
Similar Items
-
Process Development of Low-Loss LPCVD Silicon Nitride Waveguides on 8-Inch Wafer
by: Zhaoyi Li, et al.
Published: (2023-03-01) -
Low-Loss Compact Silicon Nitride Arrayed Waveguide Gratings for Photonic Integrated Circuits
by: Kuanping Shang, et al.
Published: (2017-01-01) -
High-Efficiency Grating Coupler in 400 nm and 500 nm PECVD Silicon Nitride With Bottom Reflector
by: Siddharth Nambiar, et al.
Published: (2019-01-01) -
Highly sensitive Mach–Zehnder interferometer biosensor based on silicon nitride slot waveguide
by: Liu, Qing, et al.
Published: (2016) -
All-Silicon Photoelectric Biosensor on Chip Based on Silicon Nitride Waveguide with Low Loss
by: Yu Tang, et al.
Published: (2023-03-01)