| Summary: | All-inorganic perovskite quantum dots (QDs), a promising semiconductor material, is suitable for new generation optoelectronic application. While there are many kinds of coating procedures for producing perovskite QDs peorovskite film, those methods require post-treatments and an additional dispersion support agent while still retaining pinholes and cracks. In this work, we report a facile method to produce CsPbBr<sub>3</sub> film on a pre-patterned Pt electrode using a centrifuge coating method for photodetector (PD) application. Compact and crack-free films with ~500 nm thick from various particle sizes of 8 nm, 12 nm, and >30 nm were achieved with a suitable ratio of toluene/ethyl acetate solvent for visible light photodetector application. The optimized device has an on/off ratio of 10<sup>3</sup>, detectivity of 3 × 10<sup>12</sup> Jones, and responsivity of 6 A/W. In comparison, the on/off ratio of the device fabricated by the centrifuge coating method was 10<sup>2</sup> times higher than by the drop-coating method. The PD performance exhibited considerable moisture stability at mild high ambient temperature with no encapsulation for more than two weeks. The results suggest that this is a potential method for fabricating all inorganic perovskite nano-semiconductor films for further optoelectronic application in photodetectors, LEDs, and solar cells.
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