High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors
Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gat...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2011-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://iopscience.iop.org/1468-6996/12/2/025001 |
| _version_ | 1818007144178384896 |
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| author | Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray |
| author_facet | Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray |
| author_sort | Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray |
| collection | DOAJ |
| description | Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones. |
| first_indexed | 2024-04-14T05:11:50Z |
| format | Article |
| id | doaj.art-a85e54d707b34153821f8a233c25c2bc |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-04-14T05:11:50Z |
| publishDate | 2011-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-a85e54d707b34153821f8a233c25c2bc2022-12-22T02:10:32ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142011-01-01122025001High-mobility solution-processed copper phthalocyanine-based organic field-effect transistorsNandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K RaySolution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.http://iopscience.iop.org/1468-6996/12/2/025001 |
| spellingShingle | Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors Science and Technology of Advanced Materials |
| title | High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors |
| title_full | High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors |
| title_fullStr | High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors |
| title_full_unstemmed | High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors |
| title_short | High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors |
| title_sort | high mobility solution processed copper phthalocyanine based organic field effect transistors |
| url | http://iopscience.iop.org/1468-6996/12/2/025001 |
| work_keys_str_mv | AT nandubchaureandrewncammidgeisabellechambriermichaeljcookmarkysgcaincraigemurphychandanapalandasimkray highmobilitysolutionprocessedcopperphthalocyaninebasedorganicfieldeffecttransistors |