An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process
A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the s...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-11-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4936629 |
| _version_ | 1798043014310920192 |
|---|---|
| author | Takeshi Nagase Ryo Yamashita Atsushi Yabuuchi Jung-Goo Lee |
| author_facet | Takeshi Nagase Ryo Yamashita Atsushi Yabuuchi Jung-Goo Lee |
| author_sort | Takeshi Nagase |
| collection | DOAJ |
| description | A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface. |
| first_indexed | 2024-04-11T22:43:45Z |
| format | Article |
| id | doaj.art-a88bd28db9d7461d81115c3cbf33916b |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-11T22:43:45Z |
| publishDate | 2015-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-a88bd28db9d7461d81115c3cbf33916b2022-12-22T03:58:52ZengAIP Publishing LLCAIP Advances2158-32262015-11-01511117145117145-610.1063/1.4936629076511ADVAn amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation processTakeshi Nagase0Ryo Yamashita1Atsushi Yabuuchi2Jung-Goo Lee3Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1, Mihogaoka, Ibaraki, Osaka 567-0047, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871, JapanPowder & Ceramics Division, Korea Institute of Materials Science, 66 Sangnam-dong, Changwon, Kyungsangnam-Do 641-101, KoreaA Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.http://dx.doi.org/10.1063/1.4936629 |
| spellingShingle | Takeshi Nagase Ryo Yamashita Atsushi Yabuuchi Jung-Goo Lee An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process AIP Advances |
| title | An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process |
| title_full | An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process |
| title_fullStr | An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process |
| title_full_unstemmed | An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process |
| title_short | An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process |
| title_sort | amorphous phase formation at palladium silicon oxide pd siox interface through electron irradiation electronic excitation process |
| url | http://dx.doi.org/10.1063/1.4936629 |
| work_keys_str_mv | AT takeshinagase anamorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT ryoyamashita anamorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT atsushiyabuuchi anamorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT junggoolee anamorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT takeshinagase amorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT ryoyamashita amorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT atsushiyabuuchi amorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess AT junggoolee amorphousphaseformationatpalladiumsiliconoxidepdsioxinterfacethroughelectronirradiationelectronicexcitationprocess |