State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots

The main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic...

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Main Author: Daniele Barettin
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/13/12/1820
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author Daniele Barettin
author_facet Daniele Barettin
author_sort Daniele Barettin
collection DOAJ
description The main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic applications. In addition to a complete overview of the continuous and atomistic models for the electromechanical fields, analytical results will be presented for some relevant approximations, some of which are unpublished, such as models in cylindrical approximation or a cubic approximation for the transformation of a zincblende parametrization to a wurtzite one and vice versa. All analytical models will be supported by a wide range of numerical results, most of which are also compared with experimental measurements.
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spelling doaj.art-a88d6008e29e43b99acb256d73a0a3592023-11-18T11:53:20ZengMDPI AGNanomaterials2079-49912023-06-011312182010.3390/nano13121820State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum DotsDaniele Barettin0Daniele Barettin of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, ItalyThe main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic applications. In addition to a complete overview of the continuous and atomistic models for the electromechanical fields, analytical results will be presented for some relevant approximations, some of which are unpublished, such as models in cylindrical approximation or a cubic approximation for the transformation of a zincblende parametrization to a wurtzite one and vice versa. All analytical models will be supported by a wide range of numerical results, most of which are also compared with experimental measurements.https://www.mdpi.com/2079-4991/13/12/1820quantum dotswurtzitezincblendeelectromechanical fields
spellingShingle Daniele Barettin
State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
Nanomaterials
quantum dots
wurtzite
zincblende
electromechanical fields
title State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
title_full State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
title_fullStr State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
title_full_unstemmed State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
title_short State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
title_sort state of the art of continuous and atomistic modeling of electromechanical properties of semiconductor quantum dots
topic quantum dots
wurtzite
zincblende
electromechanical fields
url https://www.mdpi.com/2079-4991/13/12/1820
work_keys_str_mv AT danielebarettin stateoftheartofcontinuousandatomisticmodelingofelectromechanicalpropertiesofsemiconductorquantumdots