Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures
Recent discoveries in the field of graphene-based heterostructures have led to the demonstration of high-performance photodetectors. However, the studies to date have been largely limited to the heterojunction with a Schottky barrier, restricted by an inevitable compromise between photoresponsivity...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2020-03-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2019-0499 |
| _version_ | 1818716554477436928 |
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| author | Xu Ji Liu Ting Hu Hai Zhai Yusheng Chen Ke Chen Na Li Chi Zhang Xiaobing |
| author_facet | Xu Ji Liu Ting Hu Hai Zhai Yusheng Chen Ke Chen Na Li Chi Zhang Xiaobing |
| author_sort | Xu Ji |
| collection | DOAJ |
| description | Recent discoveries in the field of graphene-based heterostructures have led to the demonstration of high-performance photodetectors. However, the studies to date have been largely limited to the heterojunction with a Schottky barrier, restricted by an inevitable compromise between photoresponsivity and photodetectivity. Here, a new class of graphene-based tunneling photodetectors is introduced by inserting the Al2O3 tunneling layer between silicon and graphene. The photocarriers can tunnel through the designed insulator layer which simultaneously blocks the dark current, thus maintaining high photodetectivity with desirable photoresponsivity. We further modulate the thickness of the Al2O3 layer to explore the tunneling mechanism for the photocarriers, in which a photoresponsivity of 0.75 A/W, a high current ratio of 4.8 × 103 and a photodetectivity of 3.1 × 1012 Jones are obtained at a 13.3-nm-thick Al2O3 layer. In addition, the fabrication process is compatible with conventional semiconductor processing, providing further flexibility to large-scale integrated photodetectors with high performance. |
| first_indexed | 2024-12-17T19:21:06Z |
| format | Article |
| id | doaj.art-a88ee62b9bb34085b09139c0a65ac54a |
| institution | Directory Open Access Journal |
| issn | 2192-8606 2192-8614 |
| language | English |
| last_indexed | 2024-12-17T19:21:06Z |
| publishDate | 2020-03-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-a88ee62b9bb34085b09139c0a65ac54a2022-12-21T21:35:33ZengDe GruyterNanophotonics2192-86062192-86142020-03-019123841384810.1515/nanoph-2019-0499nanoph-2019-0499Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructuresXu Ji0Liu Ting1Hu Hai2Zhai Yusheng3Chen Ke4Chen Na5Li Chi6Zhang Xiaobing7Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210096, ChinaNational Institute for Materials Science, Tsukuba, Ibaraki 305-0044, JapanDivision of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, ChinaJoint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210096, ChinaDivision of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, ChinaDivision of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, ChinaDivision of Nanophotonics, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, ChinaJoint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210096, ChinaRecent discoveries in the field of graphene-based heterostructures have led to the demonstration of high-performance photodetectors. However, the studies to date have been largely limited to the heterojunction with a Schottky barrier, restricted by an inevitable compromise between photoresponsivity and photodetectivity. Here, a new class of graphene-based tunneling photodetectors is introduced by inserting the Al2O3 tunneling layer between silicon and graphene. The photocarriers can tunnel through the designed insulator layer which simultaneously blocks the dark current, thus maintaining high photodetectivity with desirable photoresponsivity. We further modulate the thickness of the Al2O3 layer to explore the tunneling mechanism for the photocarriers, in which a photoresponsivity of 0.75 A/W, a high current ratio of 4.8 × 103 and a photodetectivity of 3.1 × 1012 Jones are obtained at a 13.3-nm-thick Al2O3 layer. In addition, the fabrication process is compatible with conventional semiconductor processing, providing further flexibility to large-scale integrated photodetectors with high performance.https://doi.org/10.1515/nanoph-2019-0499fowler-nordheim theorygrapheneheterostructurephotoresponsetunneling photodetector |
| spellingShingle | Xu Ji Liu Ting Hu Hai Zhai Yusheng Chen Ke Chen Na Li Chi Zhang Xiaobing Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures Nanophotonics fowler-nordheim theory graphene heterostructure photoresponse tunneling photodetector |
| title | Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures |
| title_full | Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures |
| title_fullStr | Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures |
| title_full_unstemmed | Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures |
| title_short | Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures |
| title_sort | design and optimization of tunneling photodetectors based on graphene al2o3 silicon heterostructures |
| topic | fowler-nordheim theory graphene heterostructure photoresponse tunneling photodetector |
| url | https://doi.org/10.1515/nanoph-2019-0499 |
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