Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
Abstract Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transisto...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-38242-w |
| _version_ | 1797832040942403584 |
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| author | Zhongyunshen Zhu Anton E. O. Persson Lars-Erik Wernersson |
| author_facet | Zhongyunshen Zhu Anton E. O. Persson Lars-Erik Wernersson |
| author_sort | Zhongyunshen Zhu |
| collection | DOAJ |
| description | Abstract Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits. |
| first_indexed | 2024-04-09T14:01:21Z |
| format | Article |
| id | doaj.art-a89ba123345f4283bd9a3e2638d6d5a9 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-09T14:01:21Z |
| publishDate | 2023-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-a89ba123345f4283bd9a3e2638d6d5a92023-05-07T11:17:58ZengNature PortfolioNature Communications2041-17232023-05-011411910.1038/s41467-023-38242-wReconfigurable signal modulation in a ferroelectric tunnel field-effect transistorZhongyunshen Zhu0Anton E. O. Persson1Lars-Erik Wernersson2Department of Electrical and Information Technology, Lund UniversityDepartment of Electrical and Information Technology, Lund UniversityDepartment of Electrical and Information Technology, Lund UniversityAbstract Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.https://doi.org/10.1038/s41467-023-38242-w |
| spellingShingle | Zhongyunshen Zhu Anton E. O. Persson Lars-Erik Wernersson Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor Nature Communications |
| title | Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor |
| title_full | Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor |
| title_fullStr | Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor |
| title_full_unstemmed | Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor |
| title_short | Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor |
| title_sort | reconfigurable signal modulation in a ferroelectric tunnel field effect transistor |
| url | https://doi.org/10.1038/s41467-023-38242-w |
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