Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and...
| Главные авторы: | , , , , , , , |
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| Формат: | Статья |
| Язык: | English |
| Опубликовано: |
Institue of Optics and Electronics, Chinese Academy of Sciences
2018-03-01
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| Серии: | Opto-Electronic Advances |
| Предметы: | |
| Online-ссылка: | http://www.oejournal.org/article/doi/10.29026/oea.2018.180004 |