Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium
The synthesis of functional graphene nanostructures on Ge(001) provides an attractive route toward integrating graphene-based electronic devices onto complementary metal oxide semiconductor-compatible platforms. In this study, we leverage the phenomenon of the anisotropic growth of graphene nanoribb...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0134756 |
| _version_ | 1827892684271910912 |
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| author | Vivek Saraswat Austin J. Way Xiaoqi Zheng Robert M. Jacobberger Sebastian Manzo Nikhil Tiwale Jonathan H. Dwyer Jason K. Kawasaki Chang-Yong Nam Padma Gopalan Michael S. Arnold |
| author_facet | Vivek Saraswat Austin J. Way Xiaoqi Zheng Robert M. Jacobberger Sebastian Manzo Nikhil Tiwale Jonathan H. Dwyer Jason K. Kawasaki Chang-Yong Nam Padma Gopalan Michael S. Arnold |
| author_sort | Vivek Saraswat |
| collection | DOAJ |
| description | The synthesis of functional graphene nanostructures on Ge(001) provides an attractive route toward integrating graphene-based electronic devices onto complementary metal oxide semiconductor-compatible platforms. In this study, we leverage the phenomenon of the anisotropic growth of graphene nanoribbons from rationally placed graphene nanoseeds and their rotational self-alignment during chemical vapor deposition to synthesize mesoscale graphene nanomeshes over areas spanning several hundred square micrometers. Lithographically patterned nanoseeds are defined on a Ge(001) surface at pitches ranging from 50 to 100 nm, which serve as starting sites for subsequent nanoribbon growth. Rotational self-alignment of the nanoseeds followed by anisotropic growth kinetics causes the resulting nanoribbons to be oriented along each of the equivalent, orthogonal Ge⟨110⟩ directions with equal probability. As the nanoribbons grow, they fuse, creating a continuous nanomesh. In contrast to nanomesh synthesis via top-down approaches, this technique yields nanomeshes with atomically faceted edges and covalently bonded junctions, which are important for maximizing charge transport properties. Additionally, we simulate the electrical characteristics of nanomeshes synthesized from different initial nanoseed-sizes, size-polydispersities, pitches, and device channel lengths to identify a parameter-space for acceptable on/off ratios and on-conductance in semiconductor electronics. The simulations show that decreasing seed diameter and pitch are critical to increasing nanomesh on/off ratio and on-conductance, respectively. With further refinements in lithography, nanomeshes obtained via seeded synthesis and anisotropic growth are likely to have superior electronic properties with tremendous potential in a multitude of applications, such as radio frequency communications, sensing, thin-film electronics, and plasmonics. |
| first_indexed | 2024-03-12T21:43:32Z |
| format | Article |
| id | doaj.art-a8bb2bce7f7d45219e7024f3d62ee010 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-12T21:43:32Z |
| publishDate | 2023-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-a8bb2bce7f7d45219e7024f3d62ee0102023-07-26T14:42:04ZengAIP Publishing LLCAPL Materials2166-532X2023-04-01114041123041123-1010.1063/5.0134756Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germaniumVivek Saraswat0Austin J. Way1Xiaoqi Zheng2Robert M. Jacobberger3Sebastian Manzo4Nikhil Tiwale5Jonathan H. Dwyer6Jason K. Kawasaki7Chang-Yong Nam8Padma Gopalan9Michael S. Arnold10Department of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USACenter for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USACenter for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USADepartment of Materials Science and Engineering, University of Wisconsin−Madison, Madison, Wisconsin 53706, USAThe synthesis of functional graphene nanostructures on Ge(001) provides an attractive route toward integrating graphene-based electronic devices onto complementary metal oxide semiconductor-compatible platforms. In this study, we leverage the phenomenon of the anisotropic growth of graphene nanoribbons from rationally placed graphene nanoseeds and their rotational self-alignment during chemical vapor deposition to synthesize mesoscale graphene nanomeshes over areas spanning several hundred square micrometers. Lithographically patterned nanoseeds are defined on a Ge(001) surface at pitches ranging from 50 to 100 nm, which serve as starting sites for subsequent nanoribbon growth. Rotational self-alignment of the nanoseeds followed by anisotropic growth kinetics causes the resulting nanoribbons to be oriented along each of the equivalent, orthogonal Ge⟨110⟩ directions with equal probability. As the nanoribbons grow, they fuse, creating a continuous nanomesh. In contrast to nanomesh synthesis via top-down approaches, this technique yields nanomeshes with atomically faceted edges and covalently bonded junctions, which are important for maximizing charge transport properties. Additionally, we simulate the electrical characteristics of nanomeshes synthesized from different initial nanoseed-sizes, size-polydispersities, pitches, and device channel lengths to identify a parameter-space for acceptable on/off ratios and on-conductance in semiconductor electronics. The simulations show that decreasing seed diameter and pitch are critical to increasing nanomesh on/off ratio and on-conductance, respectively. With further refinements in lithography, nanomeshes obtained via seeded synthesis and anisotropic growth are likely to have superior electronic properties with tremendous potential in a multitude of applications, such as radio frequency communications, sensing, thin-film electronics, and plasmonics.http://dx.doi.org/10.1063/5.0134756 |
| spellingShingle | Vivek Saraswat Austin J. Way Xiaoqi Zheng Robert M. Jacobberger Sebastian Manzo Nikhil Tiwale Jonathan H. Dwyer Jason K. Kawasaki Chang-Yong Nam Padma Gopalan Michael S. Arnold Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium APL Materials |
| title | Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium |
| title_full | Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium |
| title_fullStr | Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium |
| title_full_unstemmed | Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium |
| title_short | Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium |
| title_sort | bottom up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium |
| url | http://dx.doi.org/10.1063/5.0134756 |
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