The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion
In this paper we study the effect of the distribution profile of the doping acceptor impurities concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion parameters. It has been established that the solar energy conversion efficiency depends...
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| Format: | Article |
| Language: | English |
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Peter the Great St.Petersburg Polytechnic University
2020-06-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2020.48.02/ |
| _version_ | 1819064376246665216 |
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| author | Tregulov Vadim |
| author_facet | Tregulov Vadim |
| author_sort | Tregulov Vadim |
| collection | DOAJ |
| description | In this paper we study the effect of the distribution profile of the doping acceptor impurities concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion parameters. It has been established that the solar energy conversion efficiency depends on the degree of a doping acceptor impurity depletion of the near-surface Si-p layer in the por-Si/Si-p heterojunction. The distribution profile of the impurity concentration in this region is formed during the growth of a layer of porous silicon. The distribution profile is controlled by changing the technological parameters of the growth porous film process: current density and duration time of the electrochemical etching. The increase in the conversion efficiency of solar energy is explained by an increase in the penetration depth of the electric field into the base region due to the formation of a certain type of the impurity concentration distribution profile. In the final result this contributes to the rapid removal of charge carriers generated by the light from the base region before they have a time to recombine with the participation of traps. |
| first_indexed | 2024-12-21T15:29:35Z |
| format | Article |
| id | doaj.art-a8ce30b800b2422699a1a62907b06e87 |
| institution | Directory Open Access Journal |
| issn | 2405-7223 |
| language | English |
| last_indexed | 2024-12-21T15:29:35Z |
| publishDate | 2020-06-01 |
| publisher | Peter the Great St.Petersburg Polytechnic University |
| record_format | Article |
| series | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| spelling | doaj.art-a8ce30b800b2422699a1a62907b06e872022-12-21T18:58:49ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232020-06-0113210.18721/JPM.1320220714726The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversionTregulov Vadim0Ryazan State University named for S.A.Yesenin In this paper we study the effect of the distribution profile of the doping acceptor impurities concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion parameters. It has been established that the solar energy conversion efficiency depends on the degree of a doping acceptor impurity depletion of the near-surface Si-p layer in the por-Si/Si-p heterojunction. The distribution profile of the impurity concentration in this region is formed during the growth of a layer of porous silicon. The distribution profile is controlled by changing the technological parameters of the growth porous film process: current density and duration time of the electrochemical etching. The increase in the conversion efficiency of solar energy is explained by an increase in the penetration depth of the electric field into the base region due to the formation of a certain type of the impurity concentration distribution profile. In the final result this contributes to the rapid removal of charge carriers generated by the light from the base region before they have a time to recombine with the participation of traps.https://physmath.spbstu.ru/article/2020.48.02/porous siliconheterojunctionphotovoltaic convertersolar cellcapacitance–voltage characteristic |
| spellingShingle | Tregulov Vadim The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion St. Petersburg Polytechnical University Journal: Physics and Mathematics porous silicon heterojunction photovoltaic converter solar cell capacitance–voltage characteristic |
| title | The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion |
| title_full | The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion |
| title_fullStr | The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion |
| title_full_unstemmed | The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion |
| title_short | The influence of the distribution profile of the dopant concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion |
| title_sort | influence of the distribution profile of the dopant concentration in the base region of the cds por si si p heterostructure on the efficiency of solar energy conversion |
| topic | porous silicon heterojunction photovoltaic converter solar cell capacitance–voltage characteristic |
| url | https://physmath.spbstu.ru/article/2020.48.02/ |
| work_keys_str_mv | AT tregulovvadim theinfluenceofthedistributionprofileofthedopantconcentrationinthebaseregionofthecdsporsisipheterostructureontheefficiencyofsolarenergyconversion AT tregulovvadim influenceofthedistributionprofileofthedopantconcentrationinthebaseregionofthecdsporsisipheterostructureontheefficiencyofsolarenergyconversion |