Plasma immersion ion implantation of boron for ribbon silicon solar cells
In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template) using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses...
| Автори: | , , , , , , |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
EDP Sciences
2013-09-01
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| Серія: | EPJ Photovoltaics |
| Онлайн доступ: | http://dx.doi.org/10.1051/epjpv/2013018 |