Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating
Abstract Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it is discovered that two‐layer epitaxial graphene films o...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-02-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202204562 |
| _version_ | 1797895094313943040 |
|---|---|
| author | Martin Rejhon Xinliu Zhou Francesco Lavini Alessandra Zanut Filip Popovich Lorenzo Schellack Lukasz Witek Paulo Coelho Jan Kunc Elisa Riedo |
| author_facet | Martin Rejhon Xinliu Zhou Francesco Lavini Alessandra Zanut Filip Popovich Lorenzo Schellack Lukasz Witek Paulo Coelho Jan Kunc Elisa Riedo |
| author_sort | Martin Rejhon |
| collection | DOAJ |
| description | Abstract Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it is discovered that two‐layer epitaxial graphene films on SiC can undergo a pressure activated phase transition into a sp3 diamene structure at room temperature. Here, it is shown that epitaxial graphene films grown on SiC can increase the hardness of SiC up to 100% at low loads (up to 900 µN), and up to 30% at high loads (10 mN). By using a Berkovich diamond indenter and nanoindentation experiments, it is demonstrated that the 30% increase in hardness is present even for indentations depths of 175 nm, almost three hundred times larger than the graphene film thickness. The experiments also show that the yield point of SiC increases up to 77% when the SiC surface is coated with epitaxial graphene. These improved mechanical properties are explained with the formation of diamene under the indenter's pressure. |
| first_indexed | 2024-04-10T07:21:01Z |
| format | Article |
| id | doaj.art-a90a4f655d264451a95a22cd0a4779cb |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-10T07:21:01Z |
| publishDate | 2023-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-a90a4f655d264451a95a22cd0a4779cb2023-02-24T12:27:40ZengWileyAdvanced Science2198-38442023-02-01106n/an/a10.1002/advs.202204562Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like CoatingMartin Rejhon0Xinliu Zhou1Francesco Lavini2Alessandra Zanut3Filip Popovich4Lorenzo Schellack5Lukasz Witek6Paulo Coelho7Jan Kunc8Elisa Riedo9Department of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USADepartment of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USADepartment of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USADepartment of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USADepartment of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USADepartment of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USADivision of Biomaterials Department of Molecular Pathobiology New York University College of Dentistry New York NY USADivision of Biomaterials Department of Molecular Pathobiology New York University College of Dentistry New York NY USACharles University Faculty of Mathematics and Physics Institute of Physics Ke Karlovu 5, Prague 2 Prague CZ‐121 16 Czech RepublicDepartment of Chemical and Biomolecular Engineering Tandon School of Engineering New York University Brooklyn NY 11201 USAAbstract Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it is discovered that two‐layer epitaxial graphene films on SiC can undergo a pressure activated phase transition into a sp3 diamene structure at room temperature. Here, it is shown that epitaxial graphene films grown on SiC can increase the hardness of SiC up to 100% at low loads (up to 900 µN), and up to 30% at high loads (10 mN). By using a Berkovich diamond indenter and nanoindentation experiments, it is demonstrated that the 30% increase in hardness is present even for indentations depths of 175 nm, almost three hundred times larger than the graphene film thickness. The experiments also show that the yield point of SiC increases up to 77% when the SiC surface is coated with epitaxial graphene. These improved mechanical properties are explained with the formation of diamene under the indenter's pressure.https://doi.org/10.1002/advs.202204562diameneepitaxial grapheneSiChardnessYoung's modulus |
| spellingShingle | Martin Rejhon Xinliu Zhou Francesco Lavini Alessandra Zanut Filip Popovich Lorenzo Schellack Lukasz Witek Paulo Coelho Jan Kunc Elisa Riedo Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating Advanced Science diamene epitaxial graphene SiC hardness Young's modulus |
| title | Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating |
| title_full | Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating |
| title_fullStr | Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating |
| title_full_unstemmed | Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating |
| title_short | Giant Increase of Hardness in Silicon Carbide by Metastable Single Layer Diamond‐Like Coating |
| title_sort | giant increase of hardness in silicon carbide by metastable single layer diamond like coating |
| topic | diamene epitaxial graphene SiC hardness Young's modulus |
| url | https://doi.org/10.1002/advs.202204562 |
| work_keys_str_mv | AT martinrejhon giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT xinliuzhou giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT francescolavini giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT alessandrazanut giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT filippopovich giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT lorenzoschellack giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT lukaszwitek giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT paulocoelho giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT jankunc giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating AT elisariedo giantincreaseofhardnessinsiliconcarbidebymetastablesinglelayerdiamondlikecoating |