Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering
Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment. The capping by the TiN layer leads to the conver...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2020-10-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127520305554 |
| _version_ | 1819265534933336064 |
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| author | Chun-Yuan Wang Chin-I Wang Sheng-Han Yi Teng-Jan Chang Chun-Yi Chou Yu-Tung Yin Makoto Shiojiri Miin-Jang Chen |
| author_facet | Chun-Yuan Wang Chin-I Wang Sheng-Han Yi Teng-Jan Chang Chun-Yi Chou Yu-Tung Yin Makoto Shiojiri Miin-Jang Chen |
| author_sort | Chun-Yuan Wang |
| collection | DOAJ |
| description | Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment. The capping by the TiN layer leads to the conversion of ZrO2 from the PE to the AFE electrical characteristics, while the removal of the TiN capping layer results in the AFE-to-FE phase transformation of ZrO2. The nano-beam electron diffraction, high-resolution transmission electron microscopy and X-ray diffraction characterizations identify the presence of the AFE tetragonal and FE orthorhombic phases in ZrO2, and the observations reveal the emergence of the out-of-plane compressive and in-plane tensile strains in the ZrO2 layers by the TiN capping layer as well. The results demonstrate the significant impact of the TiN capping layer effect on the crystalline phases and dielectric properties of nanoscale thin films at a low temperature, which may play an important role in the FE/AFE applications which need a low thermal budget. |
| first_indexed | 2024-12-23T20:46:55Z |
| format | Article |
| id | doaj.art-a90ae222d9c743a0a47c750d29acf5cf |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-12-23T20:46:55Z |
| publishDate | 2020-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-a90ae222d9c743a0a47c750d29acf5cf2022-12-21T17:31:46ZengElsevierMaterials & Design0264-12752020-10-01195109020Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineeringChun-Yuan Wang0Chin-I Wang1Sheng-Han Yi2Teng-Jan Chang3Chun-Yi Chou4Yu-Tung Yin5Makoto Shiojiri6Miin-Jang Chen7Department of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, TaiwanKyoto Institute of Technology, Kyoto, JapanDepartment of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan; Corresponding author.Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment. The capping by the TiN layer leads to the conversion of ZrO2 from the PE to the AFE electrical characteristics, while the removal of the TiN capping layer results in the AFE-to-FE phase transformation of ZrO2. The nano-beam electron diffraction, high-resolution transmission electron microscopy and X-ray diffraction characterizations identify the presence of the AFE tetragonal and FE orthorhombic phases in ZrO2, and the observations reveal the emergence of the out-of-plane compressive and in-plane tensile strains in the ZrO2 layers by the TiN capping layer as well. The results demonstrate the significant impact of the TiN capping layer effect on the crystalline phases and dielectric properties of nanoscale thin films at a low temperature, which may play an important role in the FE/AFE applications which need a low thermal budget.http://www.sciencedirect.com/science/article/pii/S0264127520305554Antiferroelectricity and ferroelectricityAtomic layer depositionPhase transformationZirconium oxide and titanium nitrideCapping layer effect |
| spellingShingle | Chun-Yuan Wang Chin-I Wang Sheng-Han Yi Teng-Jan Chang Chun-Yi Chou Yu-Tung Yin Makoto Shiojiri Miin-Jang Chen Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering Materials & Design Antiferroelectricity and ferroelectricity Atomic layer deposition Phase transformation Zirconium oxide and titanium nitride Capping layer effect |
| title | Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering |
| title_full | Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering |
| title_fullStr | Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering |
| title_full_unstemmed | Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering |
| title_short | Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering |
| title_sort | paraelectric antiferroelectric ferroelectric phase transformation in as deposited zro2 thin films by the tin capping engineering |
| topic | Antiferroelectricity and ferroelectricity Atomic layer deposition Phase transformation Zirconium oxide and titanium nitride Capping layer effect |
| url | http://www.sciencedirect.com/science/article/pii/S0264127520305554 |
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