| Summary: | Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA device is not very cost-effective. In addition, its yield for mass production is not as high as expected. In order to explore the device design option for extending the current FinFET device out, we have come up with a new idea, i.e., novel device structure to increase the effective channel width without affecting the contacted poly pitch (CPP). A novel u-FinFET structure is a type of FinFET that has a u-shaped channel. By using 3-D TCAD simulation, it turned out that the u-FinFET (vs. conventional bulk/SOI FinFETs) shows a 27.3% higher drain current at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {GS}}$ </tex-math></inline-formula> = 0.7 V because of its 28.7% wider effective channel width. Especially, the u-FinFET can be adopted for high performance applications because it can implement a wider channel width for a given layout area. Moreover, taking advantages of using the current processes and materials for bulk/SOI FinFET, the u-FinFET can be fabricated (which must be very cost-effective). Hence, with taking advantages of using the u-FinFET structure, the current FinFET platform would last more.
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