Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET
Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA device is not very cost-effective. In addition, its yield for mass production is not as high as expe...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10230235/ |
| _version_ | 1827820748915343360 |
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| author | Myoungsu Son Juho Sung Hyoung Won Baac Changhwan Shin |
| author_facet | Myoungsu Son Juho Sung Hyoung Won Baac Changhwan Shin |
| author_sort | Myoungsu Son |
| collection | DOAJ |
| description | Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA device is not very cost-effective. In addition, its yield for mass production is not as high as expected. In order to explore the device design option for extending the current FinFET device out, we have come up with a new idea, i.e., novel device structure to increase the effective channel width without affecting the contacted poly pitch (CPP). A novel u-FinFET structure is a type of FinFET that has a u-shaped channel. By using 3-D TCAD simulation, it turned out that the u-FinFET (vs. conventional bulk/SOI FinFETs) shows a 27.3% higher drain current at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {GS}}$ </tex-math></inline-formula> = 0.7 V because of its 28.7% wider effective channel width. Especially, the u-FinFET can be adopted for high performance applications because it can implement a wider channel width for a given layout area. Moreover, taking advantages of using the current processes and materials for bulk/SOI FinFET, the u-FinFET can be fabricated (which must be very cost-effective). Hence, with taking advantages of using the u-FinFET structure, the current FinFET platform would last more. |
| first_indexed | 2024-03-12T01:32:30Z |
| format | Article |
| id | doaj.art-a9339263b5a74a0fa8d0760f046961f9 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-12T01:32:30Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-a9339263b5a74a0fa8d0760f046961f92023-09-11T23:00:56ZengIEEEIEEE Access2169-35362023-01-0111961709617610.1109/ACCESS.2023.330859210230235Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFETMyoungsu Son0Juho Sung1https://orcid.org/0009-0007-5629-5978Hyoung Won Baac2Changhwan Shin3https://orcid.org/0000-0001-6057-3773Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaSchool of Electrical Engineering, Korea University, Seoul, South KoreaSuperior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA device is not very cost-effective. In addition, its yield for mass production is not as high as expected. In order to explore the device design option for extending the current FinFET device out, we have come up with a new idea, i.e., novel device structure to increase the effective channel width without affecting the contacted poly pitch (CPP). A novel u-FinFET structure is a type of FinFET that has a u-shaped channel. By using 3-D TCAD simulation, it turned out that the u-FinFET (vs. conventional bulk/SOI FinFETs) shows a 27.3% higher drain current at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {GS}}$ </tex-math></inline-formula> = 0.7 V because of its 28.7% wider effective channel width. Especially, the u-FinFET can be adopted for high performance applications because it can implement a wider channel width for a given layout area. Moreover, taking advantages of using the current processes and materials for bulk/SOI FinFET, the u-FinFET can be fabricated (which must be very cost-effective). Hence, with taking advantages of using the u-FinFET structure, the current FinFET platform would last more.https://ieeexplore.ieee.org/document/10230235/FinFETSOI FinFETu-FinFETdevice design |
| spellingShingle | Myoungsu Son Juho Sung Hyoung Won Baac Changhwan Shin Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET IEEE Access FinFET SOI FinFET u-FinFET device design |
| title | Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET |
| title_full | Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET |
| title_fullStr | Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET |
| title_full_unstemmed | Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET |
| title_short | Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET |
| title_sort | comparative study of novel u shaped soi finfet against multiple fin bulk soi finfet |
| topic | FinFET SOI FinFET u-FinFET device design |
| url | https://ieeexplore.ieee.org/document/10230235/ |
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