Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET

Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET

Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA device is not very cost-effective. In addition, its yield for mass production is not as high as expe...

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Bibliographic Details
Main Authors: Myoungsu Son, Juho Sung, Hyoung Won Baac, Changhwan Shin
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
FinFET
SOI FinFET
u-FinFET
device design
Online Access:https://ieeexplore.ieee.org/document/10230235/

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