Behavior of sensitivity at edge of thin-film magnetoimpedance element

We fabricated thin-film magnetoimpedance elements in which an impedance of each 100 μm section of element can be examined, to investigate impedance changes of each section subjected to a DC magnetic field. The field strength where the impedance peaks shows a larger value at the edge and it decreases...

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Main Authors: Hiroaki Kikuchi, Suguru Oe, Hiroaki Uetake, Shin Yabukami
Format: Article
Language:English
Published: AIP Publishing LLC 2017-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4972889
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author Hiroaki Kikuchi
Suguru Oe
Hiroaki Uetake
Shin Yabukami
author_facet Hiroaki Kikuchi
Suguru Oe
Hiroaki Uetake
Shin Yabukami
author_sort Hiroaki Kikuchi
collection DOAJ
description We fabricated thin-film magnetoimpedance elements in which an impedance of each 100 μm section of element can be examined, to investigate impedance changes of each section subjected to a DC magnetic field. The field strength where the impedance peaks shows a larger value at the edge and it decreases toward the center of the element, while the sensitivity is small at the end of the elements and increases toward the center of the element. The obtained results can be explained on a basis of magnetic field simulation and simple impedance model taking into account a distribution of demagnetizing field. A uniformity of demagnetizing field is significant to obtain a higher sensitivity, and intensity of the demagnetizing field strongly affects a magnetic field strength when the impedance peaks. We also clarified an ellipsoidal shape uniform the distribution of demagnetizing field within the element, which contributes to improve the sensitivity of the MI sensor, especially near edge part.
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spelling doaj.art-a9990c1f72b949b99c1eb698471d757e2022-12-21T23:41:55ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175056602056602-510.1063/1.4972889017791ADVBehavior of sensitivity at edge of thin-film magnetoimpedance elementHiroaki Kikuchi0Suguru Oe1Hiroaki Uetake2Shin Yabukami3Faculty of Engineering, Iwate University, Morioka 020-8551, JapanFaculty of Engineering, Tohoku Gakuin University, Tagajo 985-8537, JapanFaculty of Engineering, Tohoku Gakuin University, Tagajo 985-8537, JapanFaculty of Engineering, Tohoku Gakuin University, Tagajo 985-8537, JapanWe fabricated thin-film magnetoimpedance elements in which an impedance of each 100 μm section of element can be examined, to investigate impedance changes of each section subjected to a DC magnetic field. The field strength where the impedance peaks shows a larger value at the edge and it decreases toward the center of the element, while the sensitivity is small at the end of the elements and increases toward the center of the element. The obtained results can be explained on a basis of magnetic field simulation and simple impedance model taking into account a distribution of demagnetizing field. A uniformity of demagnetizing field is significant to obtain a higher sensitivity, and intensity of the demagnetizing field strongly affects a magnetic field strength when the impedance peaks. We also clarified an ellipsoidal shape uniform the distribution of demagnetizing field within the element, which contributes to improve the sensitivity of the MI sensor, especially near edge part.http://dx.doi.org/10.1063/1.4972889
spellingShingle Hiroaki Kikuchi
Suguru Oe
Hiroaki Uetake
Shin Yabukami
Behavior of sensitivity at edge of thin-film magnetoimpedance element
AIP Advances
title Behavior of sensitivity at edge of thin-film magnetoimpedance element
title_full Behavior of sensitivity at edge of thin-film magnetoimpedance element
title_fullStr Behavior of sensitivity at edge of thin-film magnetoimpedance element
title_full_unstemmed Behavior of sensitivity at edge of thin-film magnetoimpedance element
title_short Behavior of sensitivity at edge of thin-film magnetoimpedance element
title_sort behavior of sensitivity at edge of thin film magnetoimpedance element
url http://dx.doi.org/10.1063/1.4972889
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