A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model
Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/22/2835 |
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| author | Paolo Crippa Giorgio Biagetti Claudio Turchetti Laura Falaschetti Davide Mencarelli George Deligeorgis Luca Pierantoni |
| author_facet | Paolo Crippa Giorgio Biagetti Claudio Turchetti Laura Falaschetti Davide Mencarelli George Deligeorgis Luca Pierantoni |
| author_sort | Paolo Crippa |
| collection | DOAJ |
| description | Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented. |
| first_indexed | 2024-03-10T05:32:44Z |
| format | Article |
| id | doaj.art-a99b9457a3f840b9a38b94bbfb1b2bdf |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T05:32:44Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-a99b9457a3f840b9a38b94bbfb1b2bdf2023-11-22T23:07:48ZengMDPI AGElectronics2079-92922021-11-011022283510.3390/electronics10222835A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device ModelPaolo Crippa0Giorgio Biagetti1Claudio Turchetti2Laura Falaschetti3Davide Mencarelli4George Deligeorgis5Luca Pierantoni6Department of Information Engineering, Università Politecnica delle Marche, 60131 Ancona, ItalyDepartment of Information Engineering, Università Politecnica delle Marche, 60131 Ancona, ItalyDepartment of Information Engineering, Università Politecnica delle Marche, 60131 Ancona, ItalyDepartment of Information Engineering, Università Politecnica delle Marche, 60131 Ancona, ItalyDepartment of Information Engineering, Università Politecnica delle Marche, 60131 Ancona, ItalyMicroelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research & Technology Hellas (FORTH), 70013 Crete, GreeceDepartment of Information Engineering, Università Politecnica delle Marche, 60131 Ancona, ItalyRecently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented.https://www.mdpi.com/2079-9292/10/22/2835carbon nanotubeCNTFETlow-noise amplifierLNAcompact model |
| spellingShingle | Paolo Crippa Giorgio Biagetti Claudio Turchetti Laura Falaschetti Davide Mencarelli George Deligeorgis Luca Pierantoni A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model Electronics carbon nanotube CNTFET low-noise amplifier LNA compact model |
| title | A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
| title_full | A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
| title_fullStr | A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
| title_full_unstemmed | A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
| title_short | A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model |
| title_sort | high gain cntfet based lna developed using a compact design oriented device model |
| topic | carbon nanotube CNTFET low-noise amplifier LNA compact model |
| url | https://www.mdpi.com/2079-9292/10/22/2835 |
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