Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled S...

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Bibliographic Details
Main Authors: David J. Lockwood, Xiaohua eWu, Jean-Marc eBaribeau, Selina A. Mala, Xialou eWang, Leonid eTsybeskov
Format: Article
Language:English
Published: Frontiers Media S.A. 2016-03-01
Series:Frontiers in Materials
Subjects:
Germanium
Nanostructures
Silicon
Quantum wells
interfaces
Quantum dots
Online Access:http://journal.frontiersin.org/Journal/10.3389/fmats.2016.00012/full

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