Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer

We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited enhanced drain current, reduced gate leakage curren...

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Bibliographic Details
Main Authors: Yeo-Jin Choi, Jae-Hoon Lee, Jin-Seok Choi, Sung-Jin An, Young-Min Hwang, Jae-Seung Roh, Ki-Sik Im
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Crystals
Subjects:
AlGaN/GaN
HEMTs
cap layer
low-frequency noise
carrier number fluctuations
Online Access:https://www.mdpi.com/2073-4352/11/5/489

Internet

https://www.mdpi.com/2073-4352/11/5/489

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