Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films
In this study, we report the synthesis of Zn _0.075 Cu _0.025 O films by chemical bath deposition to determine the effect of substrate (glass slide or ZnO seed layer) on the structural and H _2 gas sensing properties of the produced films. The crystal phase, structural topography, surface morphology...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ac3f09 |
| _version_ | 1827869116347711488 |
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| author | Fatma Sarf Irmak Karaduman Er Emin Yakar Selim Acar |
| author_facet | Fatma Sarf Irmak Karaduman Er Emin Yakar Selim Acar |
| author_sort | Fatma Sarf |
| collection | DOAJ |
| description | In this study, we report the synthesis of Zn _0.075 Cu _0.025 O films by chemical bath deposition to determine the effect of substrate (glass slide or ZnO seed layer) on the structural and H _2 gas sensing properties of the produced films. The crystal phase, structural topography, surface morphology, and functional groups of the as-synthesized films as well as H _2 gas sensing properties were investigated. Although both films have a hexagonal wurtzite structure, ZnO seed layer-based Zn _0.075 Cu _0.025 O film is more crystalline than glass slide-based Zn _0.075 Cu _0.025 O films. ZnO seed layer-based Zn _0.075 Cu _0.025 O films exhibited much more nanorod and fewer nanosphere forms compared to glass slide-based Zn _0.075 Cu _0.025 O films. EDX analysis and Raman spectra of both samples confirmed the presence of defects in Cu: ZnO samples. ZnO seed layer-based sensors showed higher response (140%) and lower operating temperature (80 °C) compared to glass slide-based sensors (87% response and 140 °C operating temperature). The most important thing to note here is that the fabricated sensors exhibited a high response at room temperature. The responses at room temperature were found as 46% and 23% for the ZnO seed layer-based and glass slide-based sensors, respectively. Sensors operating at room temperature are especially important for commercial applications. |
| first_indexed | 2024-03-12T15:41:26Z |
| format | Article |
| id | doaj.art-a9cbb1a868e042de8254bfaf97c7cb44 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:41:26Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-a9cbb1a868e042de8254bfaf97c7cb442023-08-09T15:59:40ZengIOP PublishingMaterials Research Express2053-15912021-01-0181212640110.1088/2053-1591/ac3f09Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O filmsFatma Sarf0Irmak Karaduman Er1https://orcid.org/0000-0003-3786-3865Emin Yakar2Selim Acar3Department of Management and Organization, Çan Vocational School, Çanakkale Onsekiz Mart University , Çanakkale, TurkeyDepartment of Medical Services and Techniques, Eldivan Medical Services Vocational School, Çankırı Karatekin University , Çankırı, TurkeyDepartment of Materials Science and Engineering, Engineering Faculty, Çanakkale Onsekiz Mart University , Çanakkale, TurkeyDepartment of Physics, Faculty of Science, Gazi University , Ankara, TurkeyIn this study, we report the synthesis of Zn _0.075 Cu _0.025 O films by chemical bath deposition to determine the effect of substrate (glass slide or ZnO seed layer) on the structural and H _2 gas sensing properties of the produced films. The crystal phase, structural topography, surface morphology, and functional groups of the as-synthesized films as well as H _2 gas sensing properties were investigated. Although both films have a hexagonal wurtzite structure, ZnO seed layer-based Zn _0.075 Cu _0.025 O film is more crystalline than glass slide-based Zn _0.075 Cu _0.025 O films. ZnO seed layer-based Zn _0.075 Cu _0.025 O films exhibited much more nanorod and fewer nanosphere forms compared to glass slide-based Zn _0.075 Cu _0.025 O films. EDX analysis and Raman spectra of both samples confirmed the presence of defects in Cu: ZnO samples. ZnO seed layer-based sensors showed higher response (140%) and lower operating temperature (80 °C) compared to glass slide-based sensors (87% response and 140 °C operating temperature). The most important thing to note here is that the fabricated sensors exhibited a high response at room temperature. The responses at room temperature were found as 46% and 23% for the ZnO seed layer-based and glass slide-based sensors, respectively. Sensors operating at room temperature are especially important for commercial applications.https://doi.org/10.1088/2053-1591/ac3f09metal oxideschemical bath depositionH2 gas sensingresistive sensor |
| spellingShingle | Fatma Sarf Irmak Karaduman Er Emin Yakar Selim Acar Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films Materials Research Express metal oxides chemical bath deposition H2 gas sensing resistive sensor |
| title | Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films |
| title_full | Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films |
| title_fullStr | Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films |
| title_full_unstemmed | Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films |
| title_short | Substrate critical effect on the structural and H2 Gas sensing characteristics of solution-processed Zn0.075Cu0.025O films |
| title_sort | substrate critical effect on the structural and h2 gas sensing characteristics of solution processed zn0 075cu0 025o films |
| topic | metal oxides chemical bath deposition H2 gas sensing resistive sensor |
| url | https://doi.org/10.1088/2053-1591/ac3f09 |
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